TYSEMI 2SA1946

IC
SMD Type
Product specification
2SA1946
Features
Low collector saturation voltage
VCE(sat)=-0.25V typ
High fT: fT=180MHz typ
Excellent linearity of DC forward current gain
High collector current Icm=-1A
Small package for mounting
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Emitter-base voltage
VEBO
-4
V
Collector-emitter voltage
VCEO
-20
V
Peak collector current
ICM
-1
A
Collector current
IC
-700
mA
Collector dissipation (Ta=25 )
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Colllector-base breakdown voltage
V(BR)CBO IC=-10ìA,IE=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10ìA,IC=0
-4
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-100ìA,RBE=
-20
V
Collector cutoff current
ICBO
VCB=-25V,IE=0
-1
ìA
Emitter cutoff current
IEBO
VEB=-2V,IC=0
-1
ìA
hFE
VCE=-4V,IC=-100mA
DC current gain
VCE(sat) IC=-500mA,IB=-25mA
Collector-emitter saturation voltage
Gain bandwidth product
fT
VCE=-6V,IE=-10mA
150
800
-0.25
180
-0.5
V
MHz
hFE Classification
Marking
AAE
AAF
AAG
hFE
150 300
250 500
400 800
http://www.twtysemi.com
[email protected]
4008-318-123
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