Transistors IC SMD Type Silicon PNP Epitaxial 2SA1946 Features Low collector saturation voltage VCE(sat)=-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Emitter-base voltage VEBO -4 V Collector-emitter voltage VCEO -20 V Peak collector current ICM -1 A Collector current IC -700 mA Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Colllector-base breakdown voltage V(BR)CBO IC=-10ìA,IE=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-10ìA,IC=0 -4 V Collector-emitter breakdown voltage V(BR)CEO IC=-100ìA,RBE= -20 V Collector cutoff current ICBO VCB=-25V,IE=0 -1 ìA Emitter cutoff current IEBO VEB=-2V,IC=0 -1 ìA hFE VCE=-4V,IC=-100mA DC current gain VCE(sat) IC=-500mA,IB=-25mA Collector-emitter saturation voltage Gain bandwidth product fT VCE=-6V,IE=-10mA 150 800 -0.25 180 -0.5 V MHz hFE Classification Marking AAE AAF AAG hFE 150 300 250 500 400 800 www.kexin.com.cn 1