Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating Unit VCBO 20 V Emitter-base voltage VEBO 6 V Collector-emitter voltage VCEO 16 V Peak collector current ICM 3 A Collector current IC 2 A Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons V(BR)CBO IC=10ìA,IE=0 Colllector-base breakdown voltage Min Typ Max Unit 20 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 6 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,RBE= 16 V Collector cutoff current ICBO VCB=16V,IE=0 Emitter cutoff current IEBO VEB=4V,IC=0 DC current gain hFE VCE=4V,IC=100mA VCE(sat) IC=1A,IB=50mA Collector-emitter saturation voltage Gain bandwidth product fT Collector output capacitance Cob 150 0.2 ìA 0.2 ìA 800 0.17 0.3 V VCE=2V,IE=-10mA 80 MHz VCB=10V,IE=0,f=1MHz 28 pF hFE Classification Marking BE BF BG hFE 150 300 250 500 400 80 www.kexin.com.cn 1