Transistors SMD Type Product specification 2SD1418 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V IC 1 A Peak collector current ICP *1 2 A Collector power dissipation PC *2 1 W Collector current Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. PW 10 ms; d 0.02. *2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 120 V Collector to emitter breakdown voltage V(BR)CEO IC = 1 mA, RBE = 80 V Emitter to base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 5 V Collector cutoff current ICBO VCB = 100 V, IE = 0 DC current transfer ratio hFE VCE = 5 V,IC = 150 mA Collector to emitter saturation voltage 10 60 ìA 320 VCE(sat) IC = 500 mA,IB = 50 mA 1 Base to emitter voltage VBE VCE = 5 V,IC = 150 mA Gain bandwidth product fT VCE = 5 V,IC = 150 mA 140 MHz VCB = 10 V, IE = 0,f = 1 MHz 12 pF Collector output capacitance Cob 1.5 V V hFE Classification D Marking Rank A B C hFE 60 120 100 200 160 320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1