Product specification 2SC2776 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 4 V Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 4 Collector cutoff current ICBO VCB = 10V, IC = 0 DC current transfer ratio hFE VCE = 6 V, IC = 1 mA VCE(sat) IC = 10 mA, IB = 1 mA Collector to emitter saturation voltage Collector output capacitance Cob V 0.5 35 ìA 200 0.8 1.2 V VCB = 10 V, IE = 0, f = 1 MHz 1.1 pF Gain bandwidth product fT VCE = 6 V, IC = 1 MA 320 MHz Noise figure NF VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 Ù 5.5 dB Power gain PG 17 dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100Ù, RL = 550Ù hFE Classification Marking VA VB VC Rank A B C hFE 35 70 60 120 100 200 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1