Product specification 2SB1002 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -70 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -6 V IC -1 A peak collector current ICP *1 -1.5 A Collector power dissipation W Collector current PC *2 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. PW 10 ms; d 0.02. *2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -70 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -50 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -6 V Collector cutoff current ICBO VCB = -50V, IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4 V, IC = 0 -0.1 ìA DC current transfer ratio hFE VCE = -2 V,IC = -0.1 A 100 320 Collector to emitter saturation voltage VCE(sat) IC = -1 A,IB = -0.1 A -0.6 V Base to emitter saturation voltage VBE(sat) IC = -1 A,IB = -0.1 A -1.2 V Gain bandwidth product fT Collector output capacitance Cob VCE = -2 V,IC = -10 mA 150 MHz VCB = -10 V, IE = 0,f = 1 MHz 35 pF hFE Classification Marking CH CJ hFE 100 200 160 320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1