Product specification 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -7 V Peak collector current ICP -200 A Collector current IC -100 A mW Collector power dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -45 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -45 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -7 V Collector-base cutoff current ICBO VCB = -20 V, IE = 0 -0.1 ìA Collector-emitter cutoff current ICEO VCE = -10 V, IB = 0 -100 ìA Forward current transfer ratio hFE VCE = -10 V, IC = -2 mA Collector-emitter saturation voltage 160 VCE(sat) IC = -100 mA, IB = -10 mA Transition frequency fT Collector output capacitance Cob 460 -0.3 -0.5 V VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = -10 V, IE = 0, f = 1 MHz 2.7 pF hFE Classification Marking BQ BR BS B Rank Q R S No-rank hFE 160 260 210 340 290 460 160 460 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1