IC SMD Type Product specification 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE(sat) +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 High collector-emitter voltage (Base open) VCEO 1. Base +0.1 0.40-0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -80 V Collector-emitter voltage VCEO IC = -1 mA, IB = 0 -80 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Collector-base cutoff current ICBO VCB = -40 V, IE = 0 hFE VCE = -2 V, IC = -100 mA Forward current transfer ratio -0.1 120 ìA 340 Collector-emitter saturation voltage VCE(sat) IC = -500 mA, IB = -50 mA -0.2 -0.3 V Base-emitter saturation voltage VBE(sat) IC = -500 mA, IB = -50 mA -0.85 -1.2 V Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA, f = 200 MHz 120 VCB = -10 V, IE = 0, f = 1 MHz 15 MHz 30 pF hFE Classification 1Z Marking Rank R S hFE 120 240 170 340 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1