TYSEMI 2SB1302

Product specification
2SB1302
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-5
A
Collector current (pulse)
ICP
-8
A
Collector dissipation
PC
1.3
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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4008-318-123
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Product specification
2SB1302
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -20V , IE = 0
Emitter cutoff current
IEBO
VEB = -4V , IE = 0
DC current Gain
hFE
VCE = -2V , IC = -500mA
fT
VCE = -5V , IC = -200mA
Gain bandwidth product
Output capacitance
Min
100
Max
Unit
-500
nA
-500
nA
400
320
VCB = -10V , f = 1MHz
Cob
Typ
MHz
60
pF
Collector-emitter saturation voltage
VCE(sat) IC = -3A , IB = -60mA
-250
-500
V
Base-emitter saturation voltage
VBE(sat) IC = -3A , IB = -60mA
-1
-1.3
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-20
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
Turn-on time
ton
40
ns
Storage time
tstg
200
ns
tf
10
ns
Fall time
hFE Classification
BJ
Marking
Rank
hFE
R
100
S
200
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140
T
280
200
400
[email protected]
4008-318-123
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