TYSEMI 2SB649A

Transistor
IC
Transistors
IC
Transistor
DIP
SMDType
Type
Type
DIP
SMD
Type
Product specification
2SB649A
Features
Collector-Emitter Voltage :-160V
Collector Current :-1.5A
1 Emitter
2 Collector
3 Base
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-180
V
Collector-emitter voltage
VCEO
-160
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC=-1mA, IE=0
-180
Collector-emitter voltage
VCEO
IC=-10mA, RBE=
-160
V
Emitter-base voltage
VEBO
IE=-1mA, IC=0
-5
V
Collector cutoff current
ICBO
VCB=-160V
Collector-emitter saturation voltage
V
-10
IE=0
VCE(sat) IC=-600mA,IB=-50mA
Base-Emitter Voltage
VBE
DC current gain
hFE
Output capacitance
Cob
Transition frequency
fT
VCE=5V, IC=150mA
VCE=-5V,IC=-150mA
60
VCE=-5V,IC=-500mA
30
A
-1
V
-1.5
V
200
VCB = -10 V, IE = 0, f = 1 MHz
27
pF
VCE=-5V, IC=-0.15A
140
MHz
hFE Classification
Rank
B
C
hFE
60 to 120
100 to 200
http://www.twtysemi.com
[email protected]
4008-318-123
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