Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -180 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC=-1mA, IE=0 -180 Collector-emitter voltage VCEO IC=-10mA, RBE= -160 V Emitter-base voltage VEBO IE=-1mA, IC=0 -5 V Collector cutoff current ICBO VCB=-160V Collector-emitter saturation voltage V -10 IE=0 VCE(sat) IC=-600mA,IB=-50mA Base-Emitter Voltage VBE DC current gain hFE Output capacitance Cob Transition frequency fT VCE=5V, IC=150mA VCE=-5V,IC=-150mA 60 VCE=-5V,IC=-500mA 30 A -1 V -1.5 V 200 VCB = -10 V, IE = 0, f = 1 MHz 27 pF VCE=-5V, IC=-0.15A 140 MHz hFE Classification Rank B C hFE 60 to 120 100 to 200 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1