Product specification 2SB852 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Darlington connection for high DC current gain. 0.4 3 1 0.55 C +0.1 1.3-0.1 +0.1 2.4-0.1 ● Built-in 4kΩ resistor between base and emitter. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 B +0.1 0.97-0.1 1 Base 2 Emitter 0-0.1 4kΩ +0.1 0.38-0.1 RBE 3 Collector E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -6 V Collector Current -Continuous IC -300 mA Collector Power Dissipation(TOTAL) PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 Collector-to-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -32 V Emitter-to-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -6 V Collector cutoff current IcBO Collector cutoff current IEBO DC current gain hFE Collector-emitter saturation voltage V VCB= -24 V , IE=0 VCE= -4.5V , IC=0 VCE= -5V, IC= -100mA Transition frequency fT Cob VCE= -5V, IC= -10mA,f=100MHz VCB=-10V, IE=0A, f=1MHz μA -1 μA -1.5 V 5000 VCE(sat) IC=-200 mA, IB= -0.4mA Output capacitance -1 200 MHz 3 PF ■ Marking Marking U* http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SB852 ■ Typlacl Characteristics −500 VCE= −6V 25 COLLECTOR CURRENT : IC (mA) 50 C −50 −20 Ta= −55°C −100 0°C 75 −200 Ta=25° 100 −100 Ta=10 COLLECTOR CURRENT : IC (mA) POWER DISSIPATION : PC/PCMax (%) 125 −10 −5 Ta=25°C −9µA −80 −8µA −7µA −60 −6µA −5µA −40 −4µA −3µA −20 −2µA −2 0 0 25 50 75 100 125 0 −0.4 150 −1.2 −1.6 −2.0 −2.4 −20 −5V 10000 5000 VCE= −3V 2000 1000 500 −4 −5 IC/IB=500 −10 50000 100 Ta= 20000 10000 − 5000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 50000 20000 −3 Fig.3 Ground emitter output characteristics VCE= −5V Ta=25°C IB=0 −2 −1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter propagation characteristisc Fig.1 Power dissipation curves 100000 −0.8 0 0 BASE TO EMITTER VOLTAGE : VBE (V) AMBIENT TEMPERATURE : Ta (°C) DC CURRENT GAIN : hFE −10µA °C C 25° °C 55 2000 −5 −2 Ta= −55°C −1 −0.5 25°C 100°C 1000 200 −0.2 500 −5 −10 −20 −50 −100 −200 −5 −10 −500 −1000 −2000 Ta=25°C VCE= −5V 5000 2000 1000 500 200 100 50 2 5 10 20 50 100 −0.1 −5 −10 20 10 5 2 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage [email protected] −20 −50 −100 −200 −500 −1000 COLLECTOR CURRENT : IC (mA) Ta=25°C f=1MHz IE=0A 50 1 100 200 EMITTER CURRENT : IE (mA) http://www.twtysemi.com −500 −1000 −2000 Fig.5 DC current gain vs. collector current ( ΙΙ ) OUTPUT CAPACITANCE : Cob (pF) TRANSISION FREQUWNCY : fT (MHz) Fig.4 DC current gain vs. collector current ( Ι ) 1 −50 −100 −200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10000 −20 Fig.6 Collector-emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib (pF) 100 −2 20 Ta=25°C f=1MHz IE=0A 10 5 2 1 −1 −2 −5 −10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Emitter input capacitance vs. emitter-base voltage 4008-318-123 2 of 2