Transistors IC SMD Type Product specification FMY1A ■ Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 (3) Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Rating Symbol Unit Tr1 Tr2 Collector-base voltage VCBO -60 60 V Collector-emitter voltage VCEO -50 50 V Emitter-base voltage VEBO -6 7 V IC -150 150 mA Collector current Power dissipation(Total) Operating and Storage and Temperature Range http://www.twtysemi.com PD 300 mW Tj, TSTG -55 to +150 ℃ [email protected] 4008-318-123 1 of 5 Transistors IC SMD Type Product specification FMY1A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor Tr1(PNP) Collector-Base Breakdown Voltage V(BR)CBO IC = -50 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -50 V Emitter-Base Breakdown Voltage V(BR)EBO -6 V IC = -50 μA, IC = 0 Collector cutoff current ICBO VCB=-60V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA hFE VCE=-6V, IC= -1mA DC current gain collector-emitter saturation voltage * Transition frequency VCE(sat) fT Collector output capacitance Cob 120 560 -0.5 IC = -50 mA; IB = -5 mA 140 IC = -2 mA; VCE = -12 V; f = 100 MHz MHz 5 VCB=-12V, IE=0A, f=1MHz V pF Transistor Tr2(NPN) Collector-Base Breakdown Voltage V(BR)CBO IC = 50 μA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO 7 V IC = 50 μA, IC = 0 Collector cutoff current ICBO Emitter cutoff current IEBO VEB=7V, IC=0 DC current gain hFE VCE=6V, IC= 1mA collector-emitter saturation voltage * Transition frequency VCE(sat) fT Collector output capacitance Cob VCB=60V, IE=0 120 nA 100 nA 560 0.4 IC = 50 mA; IB = 5 mA IC = 2 mA; VCE = 12 V; f = 100 MHz 100 180 MHz 3.5 VCB=12V, IE=0A, f=1MHz V pF * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking Y1 http://www.twtysemi.com [email protected] 4008-318-123 2 of 5 Transistors IC SMD Type Product specification FMY1A ■ Typical Characteristics Tr1 (PNP) −10 −5 −2 −1 −0.5 −0.2 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.4 0 −500 −450 −400 −350 −300 −80 −60 −250 −200 −150 −40 −100 −20 −1.6 −50µA IB=0 −2.0 25˚C 100 −40˚C 200 100 50 50 −0.2 −0.5 −1 −2 −5 −10 −20 VCE=−6V −50 −100 −0.2 COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) Ta=100˚C 25˚C −40˚C −0.05 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( 2 ) http://www.twtysemi.com −10 −20 1000 lC/lB=10 −0.2 −0.2 −5 −50 −100 Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current [email protected] −3 −4 −1 −5 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( 1 ) Fig.5 DC current gain vs. collector current ( 2 ) −0.5 −0.1 −2 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( 1 ) −1 −0.5 −1 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=100˚C 200 −1 0 Fig.3 Grounded emitter output characteristics ( 2 ) 500 VCE=−5V −3V −1V Ta=25˚C −1.2 Fig.2 Grounded emitter output characteristics ( 1 ) DC CURRENT GAIN : hFE 500 −0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE −100 −31.5 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.1 Ta=25˚C COLLECTOR CURRENT : IC (mA) −20 −35.0 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 4008-318-123 3 of 5 Transistors IC SMD Type Product specification FMY1A ■ Typical Characteristics Tr2 (NPN) COLLECTOR CURRENT : IC (mA) 20 5 1 25˚C −55˚C 2 0.5 0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 Fig.10 Grounded emitter propagation characteristics 0.4 0.8 1.2 100 50 0.5 1 2 5 10 20 −55˚C 100 50 COLLECTOR CURRENT : IC (mA) IC/IB=10 0.2 Ta=100˚C 25˚C −55˚C 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( 2 ) http://www.twtysemi.com 1 2 5 10 20 50 100 200 15µA 12µA 4 9µA 6µA 2 3µA IB=0A 4 8 12 16 20 0.5 Ta=25˚C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 Ta=100˚C 25˚C −55˚C 0.1 0.05 0.02 0.01 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.17 Collector-emitter saturation voltage vs. collector current ( 3 ) [email protected] 50 100 200 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=6V IC/IB=50 0.2 0.2 0.5 Fig.15 Collector-emitter saturation voltage vs. collector current ( 1 ) Fig.14 DC current gain vs. collector current ( 2 ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 0.5 COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( 1 ) 0.1 VCE=5V 25˚C 200 10 0.2 50 100 200 18µA Fig.12 Grounded emitter output characteristics ( 2 ) TRANSITION FREQUENCY : fT (MHz) 10 0.2 21µA 6 0 0 2.0 20 20 24µA Fig.11 Grounded emitter output characteristics ( 1 ) Ta=100˚C VCE=5V 3V 1V 27µA 8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 500 200 1.6 30µA Ta=25˚C COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.30mA 0 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 80 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 0.1 0 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25˚C COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.18 Gain bandwidth product vs. emitter current 4008-318-123 4 of 5 Transistors IC SMD Type Product specification FMY1A 20 10 Ta=25˚C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.twtysemi.com [email protected] BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) ■ Typical Characteristics Ta=25˚C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current 4008-318-123 5 of 5