TYSEMI 2SA1576A

Transistors
SMD Type
Product specification
2SA1576A
Features
Excellent hFE linearity.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-0.15
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-60
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-50
V
Emitter-base breakdown voltage
BVEBO
IE=-50ìA
-6
ICBO
VCB=-60V
-0.1
ìA
IEBO
VEB=-6V
-0.1
ìA
VCE(sat) IC/IB=-50mA/-5mA
-0.5
V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
VCE=-6V, IC=-1mA
hFE
Transition frequency
fT
Output capacitance
Cob
V
120
560
VCE=-12V, IE=2mA,f=100MHz
140
VCB=-12V, IE=0A, f=1MHz
4.0
MHz
5.0
pF
hFE Classification
Marking
FQ
FR
FS
hFE
120 270
180 390
270 560
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4008-318-123
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Transistors
SMD Type
Product specification
2SA1576A
Electrical characteristic curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−24.5
−17.5
−10.5
−7.0
−2
−3.5µA
−1.2
−0.8
−0.4
−1.6
−60
500
VCE=−5V
−3V
−1V
−250
−150
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
25˚C
100
−500
−450
−400
−350
−300
−200
IB=0
−2.0
Ta=100˚C
−40˚C
200
Ta=25˚C
−40
Fig.2 Grounded emitter output
characteristics (I)
DC CURRENT GAIN : hFE
100
50
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−0.2 −0.5 −1
−50 −100
1000
TRANSITION FREQUENCY : fT (MHz)
lC/lB=10
−0.5
−0.2
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
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Ta=25˚C
VCE=−12V
200
100
50
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
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−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
500
0.5
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
−0.1
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−1
VCE=−6V
−5 −10 −20 −50 −100
−2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
DC CURRENT GAIN : hFE
−14.0
−4
−80
COLLECTOR TO MITTER VOLTAGE : VCE (V)
200
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−21.0
−6
0
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
−28.0
−8
BASE TO EMITTER VOLTAGE : VBE (V)
500
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE=−6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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