Transistors IC SMD Type Product specification FMY4A ■ Features Unit: mm ● Collector-emitter voltage: Tr1=-50V,Tr2=50V ● Collector current: Tr1=-150mA,Tr2=150mA 4 5 (3) (2) 1 (1) 2 3 Tr1 Tr2 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Rating Symbol Unit Tr1 Tr2 Collector-base voltage VCBO -60 60 V Collector-emitter voltage VCEO -50 50 V Emitter-base voltage VEBO -6 7 V Collector current IC -150 150 mA Power dissipation(Total) PD 300 mW Tj, TSTG -55 to +150 ℃ Operating and Storage and Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Transistors IC SMD Type Product specification FMY4A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor Tr1 Collector-Base Breakdown Voltage V(BR)CBO IC = -50 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -50 V Emitter-Base Breakdown Voltage V(BR)EBO -6 IC = -50 μA, IC = 0 V Collector cutoff current ICBO VCB=-60V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA DC current gain hFE VCE=-6V, IC= -1mA collector-emitter saturation voltage * Transition frequency VCE(sat) fT Collector output capacitance 120 -0.5 IC = -50 mA; IB = -5 mA V 140 IC = -2 mA; VCE = -12 V; f = 100 MHz Cob 560 MHz 5 VCB=-12V, IE=0A, f=1MHz pF Transistor Tr2 Collector-Base Breakdown Voltage V(BR)CBO IC = 50 μA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO 7 IC = 50 μA, IC = 0 V Collector cutoff current ICBO VCB=60V, IE=0 100 nA Emitter cutoff current IEBO VEB=7V, IC=0 100 nA hFE VCE=6V, IC= 1mA DC current gain collector-emitter saturation voltage * Transition frequency VCE(sat) fT Collector output capacitance 120 0.4 IC = 50 mA; IB = 5 mA V 180 IC = 2 mA; VCE = 12 V; f = 100 MHz Cob 560 MHz 3.5 VCB=12V, IE=0A, f=1MHz pF * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking Y4 ■ Typical Characteristics Tr1 (PNP) −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics http://www.twtysemi.com −10 VCE= −6V −35.0 Ta=25˚C −31.5 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics (Ι) [email protected] −100 COLLECTOR CURRENT : IC (mA) −20 Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 −80 −60 Ta=25˚C −500 −450 −400 −350 −300 −250 −200 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (ΙΙ) 4008-318-123 2 of 4 Transistors IC SMD Type Product specification 500 VCE= −5V −3V −1V Ta=25˚C Ta=100˚C 25˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 200 100 −40˚C 200 100 50 50 −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.5 −0.2 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 500 200 100 50 −50 −100 0.5 1 2 5 20 10 50 100 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (ΙΙ) Fig.4 DC current gain vs. collector current (Ι) −0.1 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) FMY4A Fig.8 Gain bandwidth product vs. emitter current 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage NPN Tr COLLECTOR CURRENT : IC (mA) 20 10 2 1 25°C −55°C 5 Ta=100°C COLLECTOR CURRENT : IC (mA) VCE=6V 0.5 0.2 0.1 0 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig.10 Grounded emitter propagation characteristics http://www.twtysemi.com 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.11 Grounded emitter output characteristics ( Ι ) [email protected] 10 COLLECTOR CURRENT : IC (mA) 100 50 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter output characteristics ( ΙΙ ) 4008-318-123 3 of 4 Transistors IC SMD Type Product specification VCE=5V 3V 1V 200 100 50 20 0.5 1 2 5 10 20 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( Ι ) Fig.14 DC current gain vs. collector current ( ΙΙ ) 0.5 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.1 0.05 0.02 0.01 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.twtysemi.com BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25°C f=1MHz IE=0A IC=0A 2 5 10 20 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 50 100 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.17 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 2 0.2 COLLECTOR CURRENT : IC (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 0.5 1 Ta=25°C Fig.15 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.5 COLLECTOR CURRENT : IC (mA) IC/IB=50 0.2 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.5 1 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 VCE=5V Ta=100°C TRANSITION FREQUENCY : fT (MHz) 500 Ta=25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) FMY4A Fig.18 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current [email protected] 4008-318-123 4 of 4