Product specification 2SB1561-Q SOT-89 ■ Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1 ● Low saturation Voltage typically +0.1 4.00-0.1 ● Collector Current Capability IC=-2A ● Collector Emitter Voltage V CEO=-60V +0.1 3.00-0.1 1. Source Base 1 1. Base 2 2. Collector 2. Drain Collector 3 Emitter 3. Emiitter 3. Gate ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage V EBO -6 IC -0.5 IC P -6 Collector Current - Continuous PC 0.5 P CM 2 Junction Temperature TJ 150 Storage Temperature range Ts tg Collector Power Dissipation Unit V A W ℃ -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Collecto- base breakdown voltage V CBO Ic= -50 µA， IE =0 -60 Collector- emitter breakdown voltage V CEO Ic= -1 mA， IB=0 -60 -6 Typ Max V Emitter - base breakdown voltage V EBO IE = -50μA ， IC =0 Collector-base cut-off current ICBO V CB= -50 V , IE=0 -100 Collector- emittercut-off current ICEO V CB= -48 V , IE=0 -700 I EBO V EB = -5V , IC=0 Emitter cut-off current Collector-emitter saturation voltage VCE(sat) IC=-1A, IB =-50mA Base - emitter saturation voltage VBE(s at) IC=-1A, IB =-50mA Unit nA -100 -0.15 -0.35 V -1.2 hF E(1) V CE= -2V, IC= -0.5A 120 hF E(2) V CE=- 2V, IC= -1.5A 45 Output capacitance Cob V CB= -10V, IE = 0A,f=1MHz 23 pF Transition frequency fT V CE= -2V, IE = -0.5A,f=100MHz 200 MHz DC current gain 270 ■ Marking Marking BL/QN http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification 2SB1561-Q Typical Characteristics −0.8 IB=−2mA −0.4 0.0 0 −1 −2 −3 −4 −0.1 −0.05 −0.02 −0.01 −5m −2m −1m 0 −5 −0.8 −1.2 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Ta=25°C 500 200 VCE= −5V 100 50 −2V −1V 20 10 5 2 1 −5m −10m−100m −100m −1 −5 −1000 −200 −100 −50 −20 200 100 50 20 10 5 2 1 2m 5m 10m 20m 50m 100m200m 500m 1 2 −5 −2 −1 −5m −10m−100m −100m −1 −5 Fig.4 Collector-emitter saturation voltage vs. collector current ( Ι ) 1000 Ta=25°C f=1MHz IE=0A IC=0A 500 Cib 200 100 Cob 50 20 10 5 2 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current http://www.twtysemi.com −40°C −10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C VCE=−2V 500 Ta=100°C 25°C COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( ΙΙ ) 1000 IC/IB=20 −500 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) −0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 DC CURRENT GAIN : hFE −0.2 −40°C −4mA 0°C −1.2 −1 −0.5 25°C A −6m VCE= −2V −2 Ta=1 0 −1.6 −5 A mA A 8m 16 2m −1 − mA −1 mA 4 −1 −10 A −8m COLLECTOR CURRENT : IC (A) mA 0 −2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : lC (A) −2.0 [email protected] Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 4008-318-123 2 of 3 Product specification 2SB1561-Q 1000 VCE=2V DC CURRENT GAIN : hFE 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 −5m −10m−100m −100m −1 −5 COLLECTOR CURRENT : IC (A) −1000 Ta=25°C −500 −200 −100 IC/IB=50 −50 20 10 −20 −10 −5 −2 −1 −5m −10m−100m −100m −1 −5 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 50 20 10 Ic max(Pulse) PW 5 m 0m 00 2 1 m =1 PW s =1 =1 Pw s s 500m 200m 100m DC COLLECTOR CURRENT : lC (A) Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Typical Characteristics 50m 20m Ta=25°C Single pulse 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area http://www.twtysemi.com [email protected] 4008-318-123 3 of 3