TYSEMI 2SC3837K

Transistors
IC
SMD Type
Product specification
2SC3837K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Small rbb'.Cc and high gain. (Typ. 6ps)
1
0.55
High transition frequency. (Typ. fT = 1.5GHz)
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
18
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=10ìA
30
V
Collector-emitter breakdown voltage
VCEO
IC=1mA
18
V
Emitter-base breakdown voltage
VEBO
IE=10ìA
3
V
Collector cutoff current
ICBO
VCB=20V
0.5
IEBO
VEB=10V
0.5
Emitter cutoff current
Collector-emitter saturation voltage
VCE(sat) IC/IB=20mA/4mA
DC current gain
hFE
Collector-base time constant
0.5
VCE=10V, IC=10mA
56
rbb'.Cc
VCB = 10V , IC = 10mA , f = 31.8MHz
6
NF
VCE=12V,IC=2mA,f=200MHz,Rg=50
4.5
Output capacitance *
Cob
VCB=10V, IE=0, f=1MHz
0.9
Transition frequency
fT
600
A
V
180
Noise factor
VCE=10V, IE= 10mA, f=200MHz
A
1500
13
ps
dB
1.5
pF
MHz
* Measured using pulse current.
hFE Classification
Marking
ACN
ACP
Rank
N
P
hFE
56
120
http://www.twtysemi.com
82
180
[email protected]
4008-318-123
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