TYSEMI 2SC4178

Transistors
IC
SMD Type
Product specification
2SC4178
Features
Micro package.
High gain bandwidth product.
Low output capacitance.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Testconditons
ICBO
VCB = 30V, IE=0
hFE
VCE = 6V , IC = 1.0mA
Min
40
VCE(sat) IC = 10mA , IB = 1.0mA
Gain bandwidth product
fT
Output capacitance
Unit
100
nA
90
180
0.1
0.3
V
MHz
VCE = 6V , IE = 0, f = 1MHz
1.0
pF
Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz
12
ps
3
dB
Noise figure
NF
400
Max
600
Cob
Collector to base time constant
VCE = 6V , IE = -1.0mA
Typ
VCE = 6V , IE = -1.0mA , Rg = 50Ù, f =
100MHz
hFE Classification
Marking
F12
hFE
40 80
http://www.twtysemi.com
F13
60
F14
120
90
180
[email protected]
4008-318-123
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