Transistors IC SMD Type NPN Silicon Epitaxia 2SC4178 Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current DC current gain * Collector-emitter saturation voltage * Testconditons ICBO VCB = 30V, IE=0 hFE VCE = 6V , IC = 1.0mA Min 40 VCE(sat) IC = 10mA , IB = 1.0mA Gain bandwidth product fT Output capacitance Unit 100 nA 90 180 0.1 0.3 V MHz VCE = 6V , IE = 0, f = 1MHz 1.0 pF Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz 12 ps 3 dB Noise figure NF VCE = 6V , IE = -1.0mA , Rg = 50Ù, f = 100MHz 400 Max 600 Cob Collector to base time constant VCE = 6V , IE = -1.0mA Typ hFE Classification Marking F12 hFE 40 80 F13 60 120 F14 90 180 www.kexin.com.cn 1