Transistors IC SMD Type Product specification 2SC4179 Features High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 50V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 5V, IC = 0 0.1 ìA DC current gain * hFE VCE = 6V , IC = 1.0mA 60 100 180 VBE VCE = 6V , IC = 1.0mA 0.65 0.70 0.75 V 0.08 0.3 V Base-emitter voltage * VCE(sat) IC = 10mA, IB = 1.0mA Collector-emitter saturation voltage * Gain bandwidth product fT Output capacitance Cob Collector to base time constant Noise figure *. PW VCE = 6V, IE = -1.0mA 150 250 MHz VCE = 6V, IE = 0, f = 1MHz 1.9 2.2 pF Cc'rb'b VCB = 6V , IE = -10mA , f = 31.9MHz 10 15 ps 2 4 dB NF VCE = 6V , IE = -1.0mA , Rg = 500Ù, f = 1.0MHz 350ìs,duty cycle 2% hFE Classification Marking FA3 hFE 60 120 http://www.twtysemi.com FA4 90 180 [email protected] 4008-318-123 1 of 1