Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4577 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Small-sized package. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector current (pulse) Icp 1 A mW Collector dissipation PC 200 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 15V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 4V, IC=0 0.1 ìA DC current gain hFE VCE = 2V , IC = 10mA fT VCE = 2V , IC = 50mA 300 MHz VCB = 10V , f = 1.0MHz 4.0 pF Gain bandwidth product Output capacitance Cob Base-emitter saturation voltage Min Typ 135 600 IC = 5mA , IB = 0.5mA 15 30 mV IC = 200mA , IB = 10mA 160 300 mV VBE(sat) IC = 200mV , IB = 10mA 0.95 1.2 V VCE(sat) Collector-emitter saturation voltage Testconditons Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 20 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 15 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V hFE Classification UT Marking Rank 5 6 7 hFE 135 270 200 400 300 600 www.kexin.com.cn 1