Transistors IC SMD Type Silicon PNP Epitaxial 2SA1944 Features High voltage VCEO=-50V Low collector to emitter saturation voltage VCE(sat)=-0.2v typ (@IC=-500mA, IB=-10mA) High hFE: hFE=400 to 800 Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Emitter-base voltage VEBO -6 V Collector-emitter voltage VCEO -50 V Peak collector current ICM -2 A Collector current IC -1 A Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=-10ìA,IE=0 Min Typ Max Unit -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10ìA,IC=0 -6 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,RBE= -50 V Collector cutoff current ICBO VCB=-40V,IE=0 Emitter cutoff current IEBO VEB=-2V,IC=0 DC current gain hFE VCE=-6V,IC=-100mA Collector-emitter saturation voltage Gain bandwidth product VCE(sat) IC=-500mA,IB=-10mA fT Collector output capacitance Cob 400 -0.1 ìA -0.1 ìA 800 -0.2 -0.5 V VCE=-10V,IE=-10mA 90 MHz VCB=-10V,IE=0,f=1MHz 30 pF Marking Marking XG www.kexin.com.cn 1