KEXIN 2SA1944

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1944
Features
High voltage VCEO=-50V
Low collector to emitter saturation voltage
VCE(sat)=-0.2v typ (@IC=-500mA, IB=-10mA)
High hFE: hFE=400 to 800
Small package for mounting
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector-emitter voltage
VCEO
-50
V
Peak collector current
ICM
-2
A
Collector current
IC
-1
A
Collector dissipation (Ta=25 )
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Colllector-base breakdown voltage
Testconditons
V(BR)CBO IC=-10ìA,IE=0
Min
Typ
Max
Unit
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10ìA,IC=0
-6
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,RBE=
-50
V
Collector cutoff current
ICBO
VCB=-40V,IE=0
Emitter cutoff current
IEBO
VEB=-2V,IC=0
DC current gain
hFE
VCE=-6V,IC=-100mA
Collector-emitter saturation voltage
Gain bandwidth product
VCE(sat) IC=-500mA,IB=-10mA
fT
Collector output capacitance
Cob
400
-0.1
ìA
-0.1
ìA
800
-0.2
-0.5
V
VCE=-10V,IE=-10mA
90
MHz
VCB=-10V,IE=0,f=1MHz
30
pF
Marking
Marking
XG
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