Transistors SMD Type Small Signal Transistor 2SC3444 Features High voltage VCEO=60V. High collector current (Ic=1A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Emitter-base voltage VEBO 6 V Collector-emitter voltage VCEO 60 V Peak collector current ICM 2 A Collector current IC 1 A mW Collector dissipation (Ta=25 ) PC 500 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Colllector-base breakdown voltage V(BR)CBO IC=10ìA,IE=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 6 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,RBE= 60 V Collector cutoff current ICBO VCB=50V,IE=0 0.2 ìA Emitter cutoff current IEBO VEB=4V,IC=0 0.2 ìA hFE VCE=4V,IC=100mA DC current gain VCE(sat) IC=500mA,IB=25mA Collector-emitter saturation voltage Gain bandwidth product fT Collector output capacitance Cob 55 300 0.11 0.3 V VCE=2V,IE=-10mA 80 MHz VCB=10V,IE=0,f=1MHz 14 pF hFE Classification Marking DC DD DE hFE 55 110 90 180 150 300 www.kexin.com.cn 1