Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1824 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage VEBO 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 15 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 100 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 100 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 15 Collector-base cutoff current ICBO VCB = 60 V, IE = 0 0.1 ìA Collector-emitter cutoff current ICEO VCE = 60 V, IB= 0 1 ìA hFE VCE = 10 V, IC = 2 mA Forward current transfer ratio VCE(sat) IC = 10 mA, IB = 1 mA Collector-emitter saturation voltage Transition frequency fT VCB = 10 V, IE = -2 mA, f = 200 MHz V 400 1200 0.05 90 0.2 V MHz hFE Classification 1V Marking Rank R S hFE 400 800 600 1200 www.kexin.com.cn 1