TYSEMI 2SD2459

Transistors
SMD Type
Product specification
2SD2459
Features
High collector to emitter voltage VCEO.
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
150
V
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
PC*
1
W
Tj
150
Tstg
-55 to +150
Collector power dissipation
Junction temperature
Storage temperature
2
* Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm
for the collector portion
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SD2459
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
0.1
ìA
Collector cutoff current
ICBO
VCB = 75V, IE = 0
Collector to base voltage
VCBO
IC = 10ìA, IE = 0
150
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
150
V
Emitter to base voltage
VEBO
Forward current transfer ratio
hFE
IE = 10ìA, IC = 0
5
VCE = 2V, IC = 100mA
120
VCE = 2V, IC = 500mA
40
V
340
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 25mA*
0.11
0.3
V
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB = 25mA*
0.8
1.2
V
VCB = 10V, IE = -50mA, f = 200MHz
90
VCB = 10V, IE = 0, f = 1MHz
12
Transition frequency
fT
Collector output capacitance
Cob
MHz
20
pF
* Pulse measurement
hFE Classification
Marking
2ER
2ES
Rank
R
S
hFE
120 240
170 340
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2