KEXIN 2SK2211

MOSFET
SMD Type
Silicon N-Channel MOSFET
2SK2211
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Low ON-resistance RDS(ON)
1
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
+0.1
2.60-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
High-speed switching
+0.1
4.00-0.1
Features
1 Gate
1. Source
Base
1.
+0.1
0.40-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
30
V
Gate to source voltage
VGSS
20
V
Drain current
Power dissipation
ID
1.0
A
Idp *
2.0
A
PD
1
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain to source breakdown voltage
VDSS
ID=0.1mA,VGS=0
Gate to source voltage
VGSS
IGS=0.1mA,VGS=0
Drain cut-off current
IDSS
VDS=25V,VGS=0
Gate leakage current
IGSS
VGS= 15V,VDS=0
Gate threshold voltage
Vth
VDS=5V,ID=1mA
0.8
Forward transfer admittance
Yfs
VDS=10V,ID=0.5A
0.5
Drain to source on-state resistance
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
ton
Rise time
tr
Turn-off delay time
toff
Typ
Max
30
V
V
20
1.0
10
2
0.48
0.75
VGS=10V,ID=0.5A
0.35
0.6
ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V
A
A
V
S
VGS=4V,ID=0.5A
VDS=10V,VGS=0,f=1MHZ
Unit
87
pF
69
pF
23
pF
12
ns
160
ns
60
ns
Marking
Marking
2M
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