MOSFET SMD Type Silicon N-Channel MOSFET 2SK2211 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON-resistance RDS(ON) 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 High-speed switching +0.1 4.00-0.1 Features 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 30 V Gate to source voltage VGSS 20 V Drain current Power dissipation ID 1.0 A Idp * 2.0 A PD 1 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain to source breakdown voltage VDSS ID=0.1mA,VGS=0 Gate to source voltage VGSS IGS=0.1mA,VGS=0 Drain cut-off current IDSS VDS=25V,VGS=0 Gate leakage current IGSS VGS= 15V,VDS=0 Gate threshold voltage Vth VDS=5V,ID=1mA 0.8 Forward transfer admittance Yfs VDS=10V,ID=0.5A 0.5 Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time ton Rise time tr Turn-off delay time toff Typ Max 30 V V 20 1.0 10 2 0.48 0.75 VGS=10V,ID=0.5A 0.35 0.6 ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V A A V S VGS=4V,ID=0.5A VDS=10V,VGS=0,f=1MHZ Unit 87 pF 69 pF 23 pF 12 ns 160 ns 60 ns Marking Marking 2M www.kexin.com.cn 1