MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -30 V VDS=0 VGSS Gate to source voltage Drain current (DC) 15 -500 ID V mA Drain current(pulse) * ID -2 A Power dissipation PD 3.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-30V,VGS=0 Gate leakage current IGSS VGS= Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Typ 12V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Gate cut-off voltage Min VDS=-10V,ID=-250mA -1.0 240 Max Unit -100 A 10 A -2.0 400 VGS=-10V,ID=-250mA 1.5 2.2 VGS=-4V,ID=-250mA 2.2 3.3 VDS=-10V,VGS=0,f=1MHZ V ms 50 pF 35 pF Reverse transfer capacitance Crss 10 pF Turn-on delay time td(on) 7 ns 10 ns td(off) 35 ns tf 20 ns Rise time tr Turn-off delay time Fall time VDD=-15V,ID=--250mA RL=60 Marking Marking JD www.kexin.com.cn 1