SMD Type Product specification 2SK3385 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss : Ciss = 1500 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 MAX. (VGS = 4.0 V, ID = 15 A) 0.127 max +0.25 2.65-0.1 RDS(on)2 = 45 m +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 15 A) +0.15 0.50-0.15 RDS(on)1 = 28 m +0.2 9.70-0.2 Low on-resistance 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 V ID 30 A Idp * 100 A Drain current Power dissipation TC=25 36 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 8 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Typ Max Unit 10 A 10 2.0 A 2.5 V Yfs VDS=10V,ID=15A RDS(on)1 VGS=10V,ID=15A 22 28 m RDS(on)2 VGS=4.0V,ID=15A 31 45 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 16 S 1500 pF 250 pF 130 pF VDS=10V,VGS=0,f=1MHZ Turn-on delay time ton 22 ns Rise time tr 250 ns Turn-off delay time toff 77 ns Fall time Total Gate Charge tf 77 ns QG 30 nC 4.8 nC 8.6 nC Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=15A,VGS(on)=10V,RG=10 ,VDD=30V ID =30 A, VDD = 48 V, VGS = 10 V [email protected] 4008-318-123 1 of 1