MOSFET IC MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification 75N08 3.30 ±0.10 TO-220 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (0.70) ● VDS=75V,RDS(on)=0.009Ω@VGS=10V,ID=30A 15.80 ±0.20 ● VDS=75V,RDS(on)=0.011Ω@VGS=4.5V,ID=20A (1.00x45°) 15.87 ±0.20 6.68 ±0.20 ■ Features 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) 1 #12 3 0.35 ±0.10 +0.10 0.50 –0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 2.54TYP [2.54 ±0.20] 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating U nit VDS 75 V Continuous Drain Current ID ±75 Continuous Drain Current ID ±66 Pulsed Drain Current*1 IDM ±240 Power Dissipation Ta = 25℃ PD 250 W Gate-to-Source Voltage VGS ±20 V Avalanche Current*1 IAR ±75 A mJ Drain- Source Voltage Repetitive Avalanche Energy*1 EAR 280 Junction-to-Case RθJC 0.6 Junction-to-Ambient R θJA 62.5 TJ,TSTG -55 to + 175 Operating Junction and Storage Temperature Range A ℃/W ℃ *1 Duty Cycle ≤ ％ 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 MOSFET IC MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification 75N08 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons Min V(BR)DSS VGS = 0V, ID = 250µA RDS(on) VGS = 10V, ID = 30A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 VDS = 15V, ID = 30A 30 gfs Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain Charge Turn-On Delay Time Rise Time Ω 3 V V S VDS = 60V, VGS = 0V 1 VDS =60V, VGS = 0V, TJ = 125℃ 50 VGS = 20V 100 VGS = -20V -100 121 VDS = 30 V, VGS = 10 V, ID = 75 A 20 10 20 107 200 22 40 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nA nC 20 11 VDD = 30V， RL=0.47Ω ， ID=75A,VGEN=10V RG=2.5 Ω µA 150 25 tf Input Capacitance 0.009 Qgd td(off) Fall Time Unit td(on) tr Turn-Off Delay Time Max 75 Static Drain-to-Source On-Resistance Forward Transconductance Typ ns 5600 VGS= 0 V, VDS = 25 V, f = 1 MHz 820 pF 275 Continuous Source Current（Body Diode) IS 75 Pulsed Source Current （ Body Diode) *1 ISM 240 Diode Forward Voltage VSD Reverse Recovery Time trr TJ = 25℃, IF = 75A Reverse RecoveryCharge Qrr di/dt = 100A/µs*1 A TJ = 25℃, IF = 75A, VGS = 0V*1 1.3 V 80 120 ns 0.32 0.54 uC *1 Pulse width ≤ 300μs; duty cycle ≤ 2%. *2 Repetitive rating; pulse width limited by max ■ Marking Marking 75N08 http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 SMDType Type DIP MOSFET IC SMDType Type DIP MOSFET IC Product specification 75N08 ■ Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V 2 10 100 ID, Drain Current [A] ID, Drain Current [A] Top: 0 150 C 0 -55 C 0 25 C 10 * Note : 1. VDS=40V 2. 250µs Pulse Test * Note : 1. 250µs Pulse Test 0 2. TC=25 C 1 1 10 0 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω], Drain-Source On-Resistance 0.012 IDR, Reverse Drain Current [A] 0.011 VGS = 10V 0.010 0.009 VGS = 20V 0.008 o * Note : TJ = 25 C 2 10 0 150 C 0 25 C 1 10 * Note : 1. VGS=0V 2. 250µs Pulse Test 0 0.007 10 0 25 50 75 100 125 150 175 0.2 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Source-Drain Violtage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 Coss 5000 Capacitances [pF] Ciss 4000 3000 2000 * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 1000 0 -1 10 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 VDS = 37.5V VDS = 60V 8 6 4 2 * Note : ID = 75A 0 10 0 1 VDS, Drain-Source Voltage [V] http://www.twtysemi.com 0 10 20 30 40 50 60 70 80 10 [email protected] QG, Total Gate Charge [nC] 4008-318-123 3 of 4 MOSFET IC SMDType Type DIP Product specification 75N08 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage ■ Typical Characteristics 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 37.5 A 0.5 0.0 -100 200 -50 0 o 10 1 10 0 70 100 µs 60 ID, Drain Current [A] ID, Drain Current [A] 1ms 10 10ms 100ms Operation in This Area is Limited by R DS(on) DC * Notes : o 1. TC = 25 C -1 50 40 30 20 o 2. TJ = 150 C 3. Single Pulse 10 200 80 10 µs 2 150 Figure 10. Maximum Drain Current vs. Case Temperature 3 10 100 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 50 o TJ, Junction Temperature [ C] 10 -2 10 0 10 1 10 0 25 2 50 100 125 150 TC, Case Temperature [ C] 0 D = 0 .5 0 .2 10 ? 0 .1 -1 N o te s : 0 1 . Z ? J C( t ) = 1 . 1 C / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z ? J C( t ) 0 .0 5 PDM 0 .0 2 0 .0 1 ? JC (t), Thermal Response 10 75 o VDS, Drain-SourceVoltage[V] t1 t2 Z s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve http://www.twtysemi.com [email protected] 4008-318-123 4 of 4