SMD Type MOSFET Product specification APM2701CG ■ Features ( SOT-23-6 ) Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A ● RDS(ON) ＜ 190mΩ (VGS =-4.5V) ● RDS(ON) ＜ 235mΩ (VGS =-2.5V) ０ｔｏ０．１ G1 S2 G2 S2 D1 G1 G2 S1 D2 n-channel p-channel ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol N-Channel P-Channel Drain-Source Voltage VD S 20 -20 Gate-Source Voltage VGS ± 10 ±10 ID 3 -1.5 I DM 10 -6 Continuous Drain Current Pulsed Drain Current Power Dissipation TA =25℃ TA =100℃ Diode Continuous Forward Current 0.83 PD IS V A W 0.3 1 Unit -1 A Thermal Resistance.Junction- to-Ambient RthJA 150 ℃/W Junction and Storage Temperature Range TJ , TSTG -55 to 150 ℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type MOSFET Product specification APM2701CG ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Symbol VDSS IDSS I GSS Testconditons Type Min ID=250μA, V GS =0V N-CH 20 ID=-250 μA, VG S =0V P-CH -20 VG S(th) RDS(On) Unit V N-CH 1 V DS=-16V, V GS =0V P-CH -1 V DS=0V, V GS = ±10V N-CH ±100 V GS = ±10V P-CH ±100 V DS=V GS ID=250 μA N-CH 0.45 0.6 1 V DS=V GS ID=-250μ A P-CH -0.45 -0.6 -1 50 70 V GS =2.5V, ID =1.7A 90 110 V GS =-4.5V, ID=-1.5A 145 190 180 2.35 V GS =4.5V, ID =3A Static Drain-Source On-Resistance Max V DS=16V, VGS=0V V DS=0V, Gate Threshold Voltage Typ N-CH μA nA V mΩ P-CH V GS =-2.5V, ID=-1A N-CH 270 N-Channel: P-CH 300 V GS =0V, VDS =10V, f=1MHz N-CH 70 P-Channel: P-CH 50 V GS =0V, VDS =-10V, f=1MHz N-CH 50 P-CH 30 Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Total Gate Charge Crs s N-CH 5 6.5 N-Channel: P-CH 4 6 V GS =4.5V, V DS =10V, ID=3A N-CH 0.5 P-Channel: P-CH 0.6 V GS =-4.5V, V DS=-10V, ID=-1.5A N-CH 1.6 P-CH 1 Qg Gate Source Charge Q gs Gate Drain Charge Q gd Turn-On Rise Time tr t d(off) Turn-Off DelayTime tf Turn-Off Fall Time Diode Forward Voltage V SD nC N-CH 6 12 N-Channel: P-CH 6 10 V GS =4.5V, V DS =10V, ID=1A, RGEN= 6Ω RL=10 Ω N-CH 5 10 P-CH 8 12 N-CH 12 23 V GS =-4.5V, V DS=-10V, ID=-1A, RGEN=6Ω P-CH RL=10 Ω N-CH 10 15 6 12 P-CH 5 10 IS =0.5A,V GS =0V N-CH 0.7 1.3 IS =-0.5A,VG S =0V P-CH -0.7 -1.3 t d(on) Turn-On DelayTime pF P-Channel: ns V ■ Marking Marking 52907 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2