Transistors IC IC SMD Type Product specification KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous *1 TA = 25 ID TA = 85 t 10S IDM Drain current Pulsed t = 10 s *1 Total power dissipation t 12 Steady State t 8.0 -3.2 2.1 -2.3 3.9 -4.4 12 -13 A A W 3.1 W -55 to 150 IS 2.5 TL 260 R V 1.1 TJ, Tstg Source Current (Body Diode) Unit V 2.9 5S Lead Temperature for Soldering Purposes P-Channel 20 PD Operating and Storage Temperature Range Junction-to-Ambient *1 N-Channel A 113 JA 10S 60 /W *1 Surface Mounted on FR4 board using 1 in sq pad size http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KTHD3100C Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Testconditons Symbol V(BR) DSS ID=250 A,VGS=0V N-Ch 20 ID=-250 A,VGS=0V P-Ch -20 VDS=16V,VGS=0V Zero gate voltage drain current IDSS VDS=16V,VGS=0V,TJ = 25 VDS=-16V,VGS=0V VDS=-16V,VGS=0V,TJ = 125 Gate?to?Source Leakage Current IGSS Gate threshold voltage *1 VGS (th) Static drain-source on-state resistance *1 RDS (on) Static drain-source on-state resistance *1 RDS (on) Forward Transconductance gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate?to?Source Gate Charge Gate?to?Drain "Miller" Charge Turn-on delay time Rise time Turn-off delay time *1 Fall time *1 Forward Voltage *1 http://www.twtysemi.com QGS QGD td (on) tr td (off) tf VSD Min Typ Max V 1 N-Ch 5.0 -5 12 V N-Ch 100 VDS = 0 V, VGS = 8V P-Ch 100 VDS = VGS, ID = 250 A N-Ch 0.6 1.2 VDS = VGS, ID = -250 A P-Ch -0.45 -1.5 N-Ch ID=2.3A,VGS=2.5V ID=-3.2A,VGS=-4.5V P-Ch ID=-2.2A,VGS=-2.5V 58 80 77 115 64 80 85 110 ID=2.9A,VDS=10V N-Ch 6.0 ID=-3.2A,VDS=-10V P-Ch 8.0 N-Channel N-Ch 165 VDS=10V,VGS=0V,f=1MHz P-Ch 680 N-Ch 80 P-Channel P-Ch 100 VDS=-10V,VGS=0V,f=1MHz N-Ch 25 P-Ch 70 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 2.3 VGS =-4.5 V, VDS = -10 V, ID =-3.2 A P-Ch 7.4 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 0.2 VGS =-4.5 V, VDS = -10 V, ID =-3.2 A P-Ch 0.6 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 0.4 VGS =-4.5 V, VDS =-10 V, ID =-3.2 A P-Ch 1.4 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 0.7 2.5 nC 6.3 ID=-3.2A,VDD=-10V P-Ch 5.8 N-Channel N-Ch 10.7 VGS=4.5V,RG=2.5 *2 P-Ch 11.7 N-Ch 9.6 P-Ch 16 N-Ch 1.5 P-Ch 12.4 IS=2.5 A,VGS=0V N-Ch 0.8 1.15 IS=-2.5 A,VGS=0 V P-Ch -0.8 -1.2 4008-318-123 m pF P-Ch [email protected] m pF N-Ch *2 V pF VGS =-4.5 V, VDS =-10 V, ID =-3.2 A VGS=-4.5V,,RG=2.5 nA S ID=2.9A,VDD=10V P-Channel A -1 P-Ch VDS = 0 V, VGS = ID=2.9A,VGS=4.5A Unit ns ns ns ns V 2 of 3 IC Transistors IC SMD Type Product specification KTHD3100C Electrical Characteristics Ta = 25 Parameter Testconditons Symbol trr N-Channel Reverse Recovery Time ta tb VGS = 0 V,dIS/dt = 100 A/ P-Channel VGS = 0 V,dIS/dt = 100 A/ Reverse Recovery Storage Charge *1 Pulse Test: Pulse Width 250 s,IS=1.5 A s,IS=?1.5A QRR s, Duty Cycle Min Typ N-Ch 12.5 P-Ch 13.5 N-Ch 9 P-Ch 9.5 N-Ch 3.5 P-Ch 4 N-Ch 6 P-Ch 6.5 Max Unit ns nC 2%. *2 Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3