TYSEMI BAP64-06

Product specification
BAP64-06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
Low diode capacitance
1
0.55
RF resistor for RF attenuators and switches
+0.1
1.3-0.1
+0.1
2.4-0.1
High voltage, current controlled
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low diode forward resistance
+0.05
0.1-0.01
+0.1
0.97-0.1
Low series inductance
0-0.1
+0.1
0.38-0.1
For applications up to 3 GHz.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
Max
Unit
VR
Min
175
V
IF
100
mA
P tot
250
mW
T stg
-65
+150
Tj
-65
+150
R th j-s
220
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
forward voltage
Conditions
VF
reverse leakage current
diode capacitance
VR
Cd
diode forward resistance
IF = 50 mA
rD
Max
Unit
0.95
1.1
V
10
VR = 20 V
1
VR = 0; f = 1 MHz
0.52
VR = 1 V; f = 1 MHz
0.37
VR = 20 V; f = 1 MHz
0.23
0.35
20
40
IF = 1 mA; f = 100 MHz; note 1
10
20
IF = 10 mA; f = 100 MHz; note 1
2
3.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
IR = 6mA; RL = 100
1.55
s
1.4
nH
,measured at IR = 3 mA
LS
A
pF
IF = 0.5 mA; f = 100 MHz; note 1
L
series inductance
Typ
VR = 175 V
when switched from IF = 10 mA to
charge carrier life time
Min
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
6Kp
http://www.twtysemi.com
[email protected]
4008-318-123
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