Product specification BAR64-02W SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz + +0.1 0.6-0.1 - Low resistance and short carrier lifetime +0.1 1.6-0.1 0.77max Very low inductance Extremely small plastic SMD package +0.05 0.1-0.02 0.07max For frequencies up to 3 GHz A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n , TS 125 J u n c tio n te m p e ra tu re O p e ra tin g te m p e ra tu re ra n g e S to ra g e te m p e ra tu re S ym bol V a lu e U n it VR 200 V IF 100 mA P to t 250 mW Tj 150 T op -5 5 to + 1 5 0 T s tg -5 5 to + 1 5 0 J u n c tio n - a m b ie n t (N o te 1 ) R th J A 220 J u n c tio n - s o ld e rin g p o in t R th J S 140 K /W N o te 1 .P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 0 .7 m m Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ I(BR) = 5 VF IF = 50 mA Diode capacitance CT V R = 20 V, f = 1 MHz 0.23 Case capacitance CC f = 1 MHz 0.09 IF = 1 mA, f = 100 MHz 12.5 rf Charge carrier life time trr Series inductance Ls 1.1 mV V VR Forward voltage Forward resistance Unit 200 Breakdown voltage A Max 0.35 pF 20 IF = 10 mA, f = 100 MHz 2.1 3.8 IF = 100 mA, f = 100 MHz 0.85 1.35 IF = 10 mA, IR = 6 mA,IR = 3 mA 1.55 s 0.6 nH Marking Marking M http://www.twtysemi.com [email protected] 4008-318-123 1 of 1