TYSEMI BAR64-02W

Product specification
BAR64-02W
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
Features
+0.05
0.8-0.05
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz
+
+0.1
0.6-0.1
-
Low resistance and short carrier lifetime
+0.1
1.6-0.1
0.77max
Very low inductance
Extremely small plastic SMD package
+0.05
0.1-0.02
0.07max
For frequencies up to 3 GHz
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
D io d e re v e rs e v o lta g e
F o rw a rd c u rre n t
T o ta l p o w e r d is s ip a tio n ,
TS
125
J u n c tio n te m p e ra tu re
O p e ra tin g te m p e ra tu re ra n g e
S to ra g e te m p e ra tu re
S ym bol
V a lu e
U n it
VR
200
V
IF
100
mA
P to t
250
mW
Tj
150
T op
-5 5 to + 1 5 0
T s tg
-5 5 to + 1 5 0
J u n c tio n - a m b ie n t (N o te 1 )
R th J A
220
J u n c tio n - s o ld e rin g p o in t
R th J S
140
K /W
N o te
1 .P a c k a g e m o u n te d o n a lu m in a 1 5 m m
1 6 .7 m m
0 .7 m m
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Condition
Min
Typ
I(BR) = 5
VF
IF = 50 mA
Diode capacitance
CT
V R = 20 V, f = 1 MHz
0.23
Case capacitance
CC
f = 1 MHz
0.09
IF = 1 mA, f = 100 MHz
12.5
rf
Charge carrier life time
trr
Series inductance
Ls
1.1
mV
V
VR
Forward voltage
Forward resistance
Unit
200
Breakdown voltage
A
Max
0.35
pF
20
IF = 10 mA, f = 100 MHz
2.1
3.8
IF = 100 mA, f = 100 MHz
0.85
1.35
IF = 10 mA, IR = 6 mA,IR = 3 mA
1.55
s
0.6
nH
Marking
Marking
M
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