BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code (tape and reel) BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Symbol Reverse voltage VR IF Ptot Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Top Tstg Operating temperature range Storage temperature range BAR 63 Unit 50 V 100 mA 250 250 mW -55 +150°C °C -55...+150°C °C Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Rth JA K/W ≤ 450 ≤ 540 Rth JS Junction-soldering point BAR64 BAR63-04,-05,-06 ≤ 280 ≤ 380 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 63... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA V(BR) Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance rf V 50 - - IR nA - - 50 VF V - 0.95 1.2 - 0.3 - - 0.21 0.3 - 1.2 1 2 - pF CT pF Ω τs ns - Ls 75 1.4 - Forward current IF = f (TA*TS) Forward current IF = f (TA*TS) BAR63 per each Diode BAR63-04,-05,-06 mA mA TS TS IF IF TA TA TS TS TA Semiconductor Group nH 2 TA Edition A01, 23.02.95 BAR 63... Permissible pulse load RthJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) BAR63 BAR63 K/W IFmax _____ I FDC R thJS tp tp Permissible pulse load RthJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) BAR63-04,-05,-06 BAR63-04,-05,-06 K/W IF max ______ I DC F R thJS t tp Semiconductor Group 3 p Edition A01, 23.02.95 BAR 63... Forward current IF= f(VF) 103 [mA] 2 10 IF 1 10 85°C 25°C -40°C 0 10 10-1 10-2 10-3 0.3 0.8 0.5 VF 1 [V] 1.2 Forward resistance rf= f (IF) f = 100 MHz Semiconductor Group Diode capacitance CT= f (VR) f = 1 MHz. 4 Edition A01, 23.02.95