Transistors IC SMD Type Product specification BFS19 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low Voltage (max. 20 V) +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 30 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings TA=25 Parameter Symbol Max Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 30 mA Peak collector current ICM 30 mA Total power dissipation Ptot 250 mW Storage temperature Tstg 150 Junction temperature Tj 150 Tamb 150 Operating ambient temperature Electrical Characteristics TA=25 Parameter 3 Symbol Test conditions Min Typ Max Unit Collector-base Breakdown voltage BVCBO IC = 100 ìA , IE = 0 30 V Collector-emitter Breakdown voltage BVCEO IC = 1mA , IB = 0 20 V Emitter-base Breakdown voltage BVEBO IE = 100 ìA , IC = 0 5 V Collector-base cutoff current VCB = 20 V , IE = 0 100 nA VCB = 20 V , IE = 0, Tj = 100 10 ìA 100 nA ICBO Emitter-base cutoff current IEBO VEB = 5.0 V , IC = 0 Forward current transfer ratio hFE VCE = 10 V , IC = 1.0 mA 65 225 Emitter-base voltage VBE VCE = 10 V , IC = 1.0 mA 650 740 Transition frequency fT VCE = 10 V , IC = 1 mA ,f = 100 MHZ Collector capacitance CC Feedback capacitance Cre mV 260 MHz VCB = 10 V , IE = 1 mA ,f = 1 MHZ 1 pF VCB = 10 V , IC = 0 mA, f = 1 MHz 0.85 pF Marking Marking F2 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1