TYSEMI BFS19

Transistors
IC
SMD Type
Product specification
BFS19
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Low Voltage (max. 20 V)
+0.1
1.3-0.1
+0.1
2.4-0.1
Low current (max. 30 mA)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings TA=25
Parameter
Symbol
Max
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
30
mA
Peak collector current
ICM
30
mA
Total power dissipation
Ptot
250
mW
Storage temperature
Tstg
150
Junction temperature
Tj
150
Tamb
150
Operating ambient temperature
Electrical Characteristics TA=25
Parameter
3
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base Breakdown voltage
BVCBO
IC = 100 ìA , IE = 0
30
V
Collector-emitter Breakdown voltage
BVCEO
IC = 1mA , IB = 0
20
V
Emitter-base Breakdown voltage
BVEBO
IE = 100 ìA , IC = 0
5
V
Collector-base cutoff current
VCB = 20 V , IE = 0
100
nA
VCB = 20 V , IE = 0, Tj = 100
10
ìA
100
nA
ICBO
Emitter-base cutoff current
IEBO
VEB = 5.0 V , IC = 0
Forward current transfer ratio
hFE
VCE = 10 V , IC = 1.0 mA
65
225
Emitter-base voltage
VBE
VCE = 10 V , IC = 1.0 mA
650
740
Transition frequency
fT
VCE = 10 V , IC = 1 mA ,f = 100 MHZ
Collector capacitance
CC
Feedback capacitance
Cre
mV
260
MHz
VCB = 10 V , IE = 1 mA ,f = 1 MHZ
1
pF
VCB = 10 V , IC = 0 mA, f = 1 MHz
0.85
pF
Marking
Marking
F2
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