Product specification DMP2035U Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate) • • • Drain SOT23 Gate Gate Protection Diode Top View ESD PROTECTED TO 3kV D Source S G Internal Schematic Top View Ordering Information (Note 4) Part Number DMP2035U-7 DMP2035UQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000 / 7” Tape & Reel 3000 / 7” Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information MP3 Date Code Key Year Code Month Code 2009 W Jan 1 http://www.twtysemi.com 2010 X Feb 2 Mar 3 MP3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET 2011 Y Apr 4 May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D 1 of 2 Product specification NEW PRODUCT DMP2035U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) TA = +25°C TA = +70°C Value -20 ±8 Unit V V IDM -3.6 -2.9 -24 Symbol PD RθJA TJ, TSTG Value 0.81 153.5 -55 to +150 ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 - - -1.0 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.4 -0.7 -1.0 V RDS(ON) - 23 30 41 35 45 62 mΩ |Yfs| VSD - 14 -0.7 -1.0 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -4.0A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 1610 157 145 9.45 15.4 2.5 3.3 16.8 12.4 94.1 42.4 - pF pF pF Ω nC nC nC ns ns ns ns VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDS = -10V, ID = -4A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 6.0Ω, ID = -1A 3. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t أ10s. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2