Product specification DMN2020LSN NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SC-59 Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • • • SC-59 Drain D Gate Gate Protection Diode ESD PROTECTED TO 2kV Maximum Ratings TOP VIEW S G Source TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Steady State Continuous TA = 25°C TA = 85°C Symbol VDSS VGSS Units V V IDM Value 20 ±12 6.9 4.5 30 Symbol PD RθJA TJ, TSTG Value 0.61 204 -55 to +150 Units W °C /W °C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, with minimum recommended pad layout. 3. Repetitive rating, pulse width limited by junction temperature. http://www.twtysemi.com [email protected] 1 of 2 Product specification NEW PRODUCT DMN2020LSN Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.5 20 28 1.2 V Static Drain-Source On-Resistance 1.0 13 18 16 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 1149 157 142 1.51 11.6 2.7 3.4 11.67 12.49 35.89 12.33 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 9.4A VDD = 10V, VGS = 4.5V, RGEN = 6Ω, ID = 1A 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2