WHXPCB AO4410

万和兴电子有限公司 www.whxpcb.com
AO4410
30V N-Channel MOSFET
General Description
Product Summary
The AO4410 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 6.2mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
TA=70°C
B
Avalanche Current B
Maximum Junction-to-Lead C
V
15
IDM
80
TJ, TSTG
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2.1
EAR
t ≤ 10s
Steady-State
Steady-State
A
3
IAR
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
±12
ID
PD
TA=70°C
Repetitive avalanche energy 0.3mH
Units
V
18
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
30
A
135
mJ
-55 to 150
°C
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.8
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
80
VGS=10V, ID=18A
TJ=125°C
VGS=4.5V, ID=15A
100
nA
1.5
V
4.7
5.5
6.4
7.4
5.2
6.2
A
gFS
Forward Transconductance
VDS=5V, ID=18A
102
Diode Forward Voltage
IS=1A,VGS=0V
0.64
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=18A
V
4.5
A
10500
pF
387
542
pF
0.4
0.8
Ω
72.4
85
Gate Drain Charge
16.8
tD(on)
Turn-On DelayTime
11
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
tr
Turn-On Rise Time
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
IF=18A, dI/dt=100A/µs
pF
13.4
Qgd
tD(off)
mΩ
S
625
0.2
mΩ
1
9130
VGS=0V, VDS=15V, f=1MHz
µA
1.1
VSD
Coss
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
nC
nC
nC
15
ns
7
11
ns
99
135
ns
13
19.5
ns
33
40
22.2
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev7: Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100000
5
VDS=15V
ID=18A
Ciss
Capacitance (pF)
VGS (Volts)
4
3
2
10000
Coss
1000
1
Crss
0
100
0
10
20
30
40
50
60
70
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
90
0
100.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
RDS(ON)
limited
100µs
10.0
80
1ms
0.1s
ID (Amps)
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
10ms
1s
10s
60
40
DC
1.0
20
TJ(Max)=150°C
TA=25°C
0
0.001
0.1
0.1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
5
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
50
VDS=5V
2.5V
40
ID(A)
ID (A)
40
VGS=2V
30
30
20
20
10
10
125°C
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
6.0
Normalized On-Resistance
1.6
VGS=4.5V
5.5
RDS(ON) (mΩ )
25°C
5.0
VGS=10V
4.5
4.0
VGS=4.5V
ID=18A
1.4
VGS=10V
1.2
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
1.0E+02
1.0E+01
12
1.0E+00
125°C
8
IS (A)
RDS(ON) (mΩ )
ID=18A
125°C
1.0E-02
1.0E-03
25°C
4
1.0E-01
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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