万和兴电子有限公司 www.whxpcb.com AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ * RoHS and Halogen-Free Compliant ESD Protected 100% UIS tested 100% Rg tested (note *) (VGS = -20V) (VGS = -20V) (VGS = -10V) SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.11.0 June 2013 Maximum -30 Units V ±25 V -17 ID -14 IDM -182 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd,com 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 Typ -1 TJ=55°C -5 ±1 µA VDS=0V, VGS=±25V ±10 µA -2.6 V VGS(th) Gate Threshold Voltage On state drain current VGS=-10V, VDS=-5V -1.5 -182 VGS=-20V, ID=-15A -2.1 A 5.1 6.2 7.4 9 VGS=-10V, ID=-15A 5.9 7.2 mΩ 9.5 mΩ TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-6V, ID=-10A 7.5 gFS Forward Transconductance VDS=-5V, ID=-15A 48 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=-10V, VDS=-15V, ID=-15A VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω -1 V A 3033 pF 397 556 pF 4.3 6.4 Ω 47 57 nC pF 8 nC 14 nC 12 ns 8 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-15A, dI/dt=100A/µs 26.1 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 12.3 Body Diode Reverse Recovery Time S 583 2.1 mΩ -4.2 2527 VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA VDS=0V, VGS=±20V ID(ON) Crss Units V VDS=-30V, VGS=0V VDS=VGS ID=-250µA Coss Max 54 ns 87 ns 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev.11.0 June 2013 www.aosmd,com 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 -4.5V VDS=-5V -4V -10V 40 40 -6V 125°C 30 -ID(A) -ID (A) 30 20 25°C 20 -3.5V 10 10 VGS=-3V 0 0 0 1 2 3 4 5 2 3 3.5 4 4.5 5 1.7 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 VGS=-6V 8 VGS=-10V 6 VGS=-20V 1.6 VGS=-20V ID = -15A 1.5 VGS=-10V ID = -15A 1.4 1.3 1.2 VGS=-6V ID = -10A 1.1 1.0 0.9 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 1.0E+01 16 -12.8 ID=-15A 1.0E+00 14 125°C 1.0E-01 12 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 10 125°C 1.0E-02 1.0E-03 8 1.0E-04 6 25°C 1.0E-05 25°C 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.11.0 June 2013 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd,com 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 3000 Capacitance (pF) -VGS (Volts) 3500 VDS=-15V ID=-15A 8 6 4 Ciss 2500 2000 1500 Coss 1000 2 500 0 10 20 30 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 10 20 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 Crss 0 0 10000 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 1000 Power (W) -ID (Amps) 100µs 10.0 1ms 10ms 1.0 0.1s 1s 0.1 100 10 10s DC °C =150°C TJ(Max)=150 TA=25°C 1 0.0 0.1 1 10 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe -15 Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 -12.8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 Single Pulse T 0.001 0.00001 0.0001 Rev.11.0 June 2013 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.aosmd,com 万和兴电子有限公司 www.whxpcb.com G ate C harge Test C ircuit & W aveform V gs Qg -10V - - VDC + VDC Q gs V ds Q gd + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.11.0 June 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd,com