WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low saturation voltage Excellent DC current gain characteristics SOT-89 1. BASE Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1 2. COLLECTOR 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -2 A PC Collector Power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA DC current gain hFE VCE=-2V, IC=-500mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking 2012-10 VCE(sat) Cob 82 270 IC=-1A, IB=-50mA -0.35 V VCE=-2V, IC=-0.5A, f=100MHz 200 MHz VCB=-10V, IE=0, f=1MHz 36 pF hFE P Q 82-180 120-270 AG P AGQ WILLAS ELECTRONIC CORP. WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic -2.0 (A) o Ta=100 C hFE -9mA -8mA o -7mA -6mA -1.0 -5mA -4mA -3mA -0.5 Ta=25 C DC CURRENT GAIN IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ -10mA -1.5 hFE —— IC 1000 100 -2mA COMMON EMITTER VCE= -2V IB=-1mA -0.0 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCE -10 -1 (V) -10 VCEsat —— VBEsat —— IC -1000 -2000 -100 COLLECTOR CURRENT IC (mA) IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -2 -1 o BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25 C o Ta=100 C -0.1 o Ta=100 C o Ta=25 C β=20 β=20 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE —— -1000 IC -2000 -0.01 -1 (mA) -10 COLLECTOR CURRENT IC Cob / Cib 1000 -2000 -1000 -2000 -100 IC (mA) VCB / VEB —— f=1MHz IE=0 / IC=0 o C (pF) Ta=25 C Cib 100 -100 CAPACITANCE COLLECTOR CURRENT IC (mA) -1000 o Ta=100 C o Ta=25 C -10 Cob 10 COMMON EMITTER VCE=-2V -1 -0.0 1 -0.3 -0.6 BASE-EMITTER VOLTAGE fT 2012-10 —— IC -0.9 -1.2 -1 -10 VBE(V) REVERSE VOLTAGE Pc —— V -20 (V) Ta WILLAS ELECTRONIC CORP. WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors 200 fT —— IC Typical Characteristics Pc —— Ta COLLECTOR POWER DISSIPATION Pc (W) (MHz) 0.6 0.5 fT 100 TRANSITION FREQUENCY 0.4 0.3 0.2 COMMON EMITTER VCE=-2V 0.1 Ta=25℃ -70 10 -1 2012-10 -10 COLLECTOR CURRENT IC (mA) 0.0 0 25 50 75 100T AMBIENT TEMPERATURE a (℃) 125 150 WILLAS ELECTRONIC CORP. WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors Outline Drawing SOT-89 .181(4.60) .173(4.39) .063(1.60) .055(1.40) .061REF (1.55)REF .102(2.60) .091(2.30) .167(4.25) .154(3.91) .023(0.58) .016(0.40) .047(1.2) .031(0.8) .060TYP (1.50)TYP .197(0.52) .013(0.32) .017(0.44) .014(0.35) .118TYP (3.0)TYP Dimensions in inches and (millimeters) Rev.C 2012-10 WILLAS ELECTRONIC CORP.