WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” z 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V Collector cut-off current ICBO VCB=80V,IE=0 1 µA Emitter cut-off current IEBO VEB=4V,IC=0 1 µA hFE VCE=3V, IC=500mA VCE(sat) IC=500mA,IB=20mA DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance fT Cob 82 390 0.4 V VCE=10V,IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING 2012-0 DF WILLAS ELECTRONIC CORP. WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic 4.5mA COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 2.5mA 5mA VCE= 3V 2mA 1.5mA 400 1.0mA 400 300 o 200 Ta=25 C 200 100 IB=0.5mA 0 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE 6 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 600 400 VCEsat —— 400 β=25 800 10 COLLECTOR CURRENT (V) VBEsat —— IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) o Ta=100 C DC CURRENT GAIN 600 hFE —— IC 500 hFE 4mA 3.5mA 3mA IC (mA) 800 Ta=100℃ 100 IC 1000 (mA) IC β=25 300 200 Ta=100℃ 100 200 Ta=25℃ 0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1000 (mA) IC 1000 10 100 Cob / Cib —— IC 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 250 C 200 CAPACITANCE TRANSITION FREQUENCY 1 COLLECTOR CURRENT fT (MHz) 300 200 IC 0 0.1 150 100 Cib 10 Cob 100 VCE=10V o Ta=25 C 50 0 20 40 60 80 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 600 —— IC 100 1 0.1 1 REVERSE VOLTAGE (mA) 10 V (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2012-0 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors Outline Drawing SOT-89 .181(4.60) .173(4.39) .063(1.60) .055(1.40) .061REF (1.55)REF .102(2.60) .091(2.30) .167(4.25) .154(3.91) .023(0.58) .016(0.40) .047(1.2) .031(0.8) .060TYP (1.50)TYP .197(0.52) .013(0.32) .017(0.44) .014(0.35) .118TYP (3.0)TYP Dimensions in inches and (millimeters) Rev.C 2012-0 WILLAS ELECTRONIC CORP.