RoHS 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features D T ,. L O SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 1. R T Marking:D3 C E L O 2.4 1.3 0.4 2.9 1.9 N C 0.95 IC o 2 0.95 o 1 Unit:mm ELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) E Parameter Reverse breakdown voltage Symbol Test Condition MIN. MAX. Unit 80 V (BR) I R =100 A Reverse Voltage leakage current IR V R =80V 0.5 Forward Voltage VF I F =100mA 1.2 V Diode Capacitance C tot V R =0V 4 pF Reverse Recovery Time t rr I F =I R =10mA I rr =0.1I R 4 nS J E W WEJ ELECTRONIC CO. Http:// www.wej.cn f=1MHz V E-mail:[email protected] A RoHS 1SS187 Typical Characteristics IF - VF IR - VR 10 1 REVERSE CURRENT I R (A) 100m 。 T A =100 C 10m 。 25 C 。 -25 C 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE V F (V) C E L Cr - V R TOTAL CAPACITANCE C T (pF) 2.5 f=1MHz 。 Ta=25 C 2.0 1.5 J E 1.0 0.5 0 W 0.3 1 R T E 3 10 30 O 100 REVERSE VOLTAGE V R (V) WEJ ELECTRONIC CO. T A =100 C 1 。 75 C 。 50 C 100n IC 。 25 C 10n N REVERSE RECOVERY TIME trr(ns) FORWARD CURRENT I F (A) 。 1m D T ,. L O 1n 0 C 20 40 60 80 REVERSE VOLTAGE V R (V) trr - I F 100 。 Ta=25 C Fig.1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 FORWARD CURRENT I F (mA) Http:// www.wej.cn E-mail:[email protected] 100