WINNERJOIN 1SS196

RoHS
1SS196 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
Features
D
T
,. L
O
SOT-23
Power dissipation
P D : 150 mW (Tamb=25 C)
Forward Current
I F : 100 mA
Reverse Voltage
V R : 80V
Operating and storage junction temperature range
T j , T stg : -55 C to +150 C
3
o
1.
R
T
Marking:G3
C
E
L
O
2.4
1.3
0.4
2.9
1.9
N
C
0.95
IC
o
2
0.95
o
1
Unit:mm
ELECTRICAL CHARACTERISTICS
o
(Ta=25 C unless otherwise specified)
E
Parameter
Reverse breakdown voltage
Symbol
Test Condition
MIN.
MAX.
Unit
80
V (BR)
I R =100 A
Reverse Voltage leakage current
IR
V R =80V
0.5
Forward Voltage
VF
I F =100mA
1.2
V
Diode Capacitance
C tot
V R =0V
4
pF
Reverse Recovery Time
t rr
I F =I R =10mA
I rr =0.1I R
4
nS
J
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
f=1MHz
V
E-mail:[email protected]
A
RoHS
1SS196
Typical Characteristics
IF - VF
FORWARD CURRENT I F (A)
1
100m
。
T A =100 C
10m
。
。
-25 C
25 C
IC
1m
N
100
10
0
0.2
0.4
O
0.6
0.8
1.0
C
D
T
,. L
O
1.2
FORWARD VOLTAGE V F (V)
R
T
C
E
L
J
E
W
E
PEVERSE CURRENT I R (A)
10
IR - VR
。
T A =100 C
1
。
75 C
100n
10n
1n
。
50 C
。
25 C
0
WEJ ELECTRONIC CO.
20
40
60
80
REVERSE NOLTAGE V R (V)
Http:// www.wej.cn
E-mail:[email protected]