RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features D T ,. L O SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o R T Marking:E3 C E L O 2.9 1.9 N 0.95 IC o C 2.4 1.3 2 0.4 1. 0.95 o 1 Unit:mm ELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) E Parameter Reverse breakdown voltage Symbol Test Condition MIN. MAX. Unit 80 V (BR) I R =100 A Reverse Voltage leakage current IR V R =80V 0.5 Forward Voltage VF I F =100mA 1.2 V Diode Capacitance C tot V R =0V 4 pF Reverse Recovery Time t rr I F =I R =10mA I rr =0.1I R 4 nS J E W WEJ ELECTRONIC CO. Http:// www.wej.cn f=1MHz V E-mail:[email protected] A RoHS 1SS190 Typical Characteristics IF - VF IR - VR 10 1 REVERSE CURRENT I R (A) 100m 。 T A =100 C 10m 。 25 C 。 -25 C 10 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE V F (V) R T C E L Cr - V R TOTAL CAPACITANCE C T (pF) 2.5 f=1MHz 。 Ta=25 C 2.0 1.5 J E 1.0 0.5 W 0 0.3 1 E 3 10 30 100 T A =100 C 1 IC O 。 50 C 100n 。 25 C C 10n 1n 0 20 40 60 80 REVERSE NOLTAGE V R (V) trr - I F 100 。 Ta=25 C Fig.1 50 30 10 5 3 1 0.5 0.1 REVERSE VOLTAGE V R (V) WEJ ELECTRONIC CO. 。 75 C N 100 REVERSE RECOVERY TIME trr(ns) FORWARD CURRENT I F (A) 。 1m D T ,. L O 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) Http:// www.wej.cn E-mail:[email protected]