AGILENT HMMC-2007

DC – 8 GHz Terminated SPDT
Switch
Technical Data
HMMC-2007
Features
• Outputs Terminated in 50 Ω
When Off
• Frequency Range: DC-8 GHz
• Insertion Loss:
1.2 dB @ 8␣ GHz
• Isolation:
>70 dB @ 45 MHz
>35 dB @ 8 GHz
• Return Loss:
25 dB (Both Input and
Selected Output)
18 dB Unselected Output
• Switching Speed:
<20 µs (10%-90% RF)
• P-1dB: 27 dBm
• Harmonics (DC Coupled):
<-80 dBc @ 10 dBm
Description
The HMMC-2007 is a GaAs monolithic microwave integrated circuit
(MMIC) designed for low insertion
loss and high isolation from DC to
8 GHz. It is intended for use as a
general-purpose, single-pole,
double-throw (SPDT), absorptive
switch. Two series and two shunt
MESFETs per throw provide
1.4␣ dB maximum insertion loss
and 38 dB typical isolation at
6␣ GHz. HMMC-2007 chips use
through-substrate vias to provide
ground connections to the chip
backside and minimize the
number of wire bonds required.
5965-5451E
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
660 x 960 µm (25.9 x 37.8 mils)
± 10 µm (± 0.4 mils)
127 ± 15 µm (5.0 ± 0.6 mils)
120 x 120 µm (4.7 x 4.7 mils)
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
V
-10.5
+10.5
Vsel
Select Voltages 1 and 2
Pin
RF Input Power
Top
Operating Temperature
°C
-55
+125
TSTG
Storage Temperature
°C
-65
+165
Tmax
Maximum Assembly Temp.
°C
+200
Punsel
Power into Unselected Output
dBm
27
dBm
27
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. TA = 25°C except for Top, TSTG, and Tmax.
7-26
DC Specifications/Physical Properties, TA = 25°C
Symbol
Parameters and Test Conditions
I SEL -10 V
Leakage Current @ -10 V
µA
200
I SEL +10 V
Leakage Current @ +10 V
µA
20
Vp
BVgss
Units
Pinch-Off Voltage (VSEL2 = Vp, VRFout2 = +2 V,
IRFout2 = 4 mA, VSEL1 = -10 V, VRFout1 = open circuit,
VRFin = GND
V
Breakdown Voltage (Test FET w/VD = VS = GND,
IG = -50 µA)
V
Min.
Typ.
-6.75
Max.
-3.00
-13.0
RF Specifications, TA = 25°C, ZO = 50 Ω, Vsel-high = +10 V, Vsel-low = -10 V
Symbol
BW
Parameters and Test Conditions
Guaranteed Operating Bandwidth
Units
Min.
GHz
DC
Typ.
8.0
IL
Insertion Loss, RFin to Selected RFout, f = 6 GHz, OFF throw
dB
1.1
ISO
Isolation, RFin to Unselected RFout, f = 6 GHz, OFF throw
dB
38
RL in
Input Return Loss @ 6 GHz
dB
25
RL out-ON
Output Return Loss, ON throw @ 6 GHz
dB
25
RL out-OFF
Output Return Loss, OFF throw @ 6 GHz
dB
18
P1 dB
Input Power where IL increases by 1 dB
fin = 2 GHz
dBm
27
ts
Switching Speed, 10% – 90% RF Envelope
fin = 2 GHz
µs
20
7-27
Max.
1.4
Applications
Assembly Techniques
The HMMC-2007 can be used in
instrumentation, communications, radar, ECM, EW, and many
other systems requiring SPDT
switching. It can be used for
pulse modulation, port isolation,
transfer switching, high-speed
switching, replacement of
mechanical switches, and so on.
Die attach should be done with
conductive epoxy. Gold
thermosonic bonding is recommended for all bonds. The top
and bottom metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
S-Parameters[1], TA = 25°C, ZO = 50 Ω, Vsel high = 0 V, Vsel low = -10 V
Freq.
GHz
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
S11
S21
S31
S22
S33
(Insertion Loss)
(Isolation)
(ON Throw)
(OFF Throw)
dB
Mag.
Ang.
dB
-26.41
-27.53
-30.69
-32.37
-31.79
-30.60
-28.53
-27.14
-26.46
-27.03
-28.64
-29.55
-26.88
-23.24
-21.53
-21.21
-20.92
-19.88
-18.65
-17.04
0.048
0.042
0.029
0.024
0.026
0.030
0.037
0.044
0.048
0.045
0.037
0.033
0.045
0.069
0.084
0.087
0.090
0.101
0.117
0.141
-57.11
-113.83
-176.73
115.57
61.35
4.27
-58.32
-124.01
172.69
107.19
32.44
-59.18
-156.32
130.95
70.91
15.06
-41.26
-104.30
-175.05
116.96
-1.08
-1.13
-1.18
-1.21
-1.25
-1.30
-1.33
-1.34
-1.37
-1.40
-1.42
-1.45
-1.51
-1.56
-1.52
-1.62
-1.64
-1.66
-1.84
-1.90
Mag. Ang.
0.88
0.88
0.87
0.87
0.87
0.86
0.86
0.86
0.85
0.85
0.85
0.85
0.84
0.84
0.84
0.83
0.83
0.83
0.81
0.80
-49.06
-93.69
-138.08
177.39
133.00
88.53
44.08
-0.53
-45.16
-89.79
-134.56
-179.46
135.54
90.76
46.04
0.47
-44.44
-90.23
-135.81
179.24
dB
dB
-67.74
-60.55
-56.17
-53.18
-50.38
-47.63
-45.67
-44.12
-42.68
-41.45
-40.28
-39.16
-38.12
-37.13
-36.36
-35.64
-34.83
-34.13
-33.62
-34.14
-28.40
-24.74
-31.91
-31.31
-28.90
-32.95
-29.26
-30.61
-32.21
-36.49
-34.51
-32.44
-27.18
-23.83
-21.48
-21.73
-22.22
-20.42
-18.17
-16.31
Mag. Ang.
0.03
0.05
0.02
0.02
0.03
0.02
0.03
0.02
0.02
0.01
0.01
0.02
0.04
0.06
0.08
0.08
0.07
0.09
0.12
0.15
-47.94
-117.54
168.76
119.22
68.41
-11.68
-44.21
-113.40
165.53
141.98
4.26
-100.27
176.54
122.00
51.31
-15.06
-81.88
-145.01
145.14
85.15
dB
Mag.
Ang.
-32.26
-30.79
-30.35
-26.21
-26.38
-25.66
-22.99
-22.41
-21.68
-19.88
-19.89
-19.03
-18.28
-18.67
-18.61
-17.65
-16.95
-16.07
-14.94
-14.31
0.024
0.029
0.030
0.049
0.048
0.052
0.071
0.076
0.082
0.101
0.101
0.112
0.122
0.117
0.117
0.131
0.142
0.157
0.179
0.193
47.18
-38.11
-64.68
-134.70
151.66
103.24
38.61
-21.25
-75.25
-133.81
167.02
115.49
56.80
-2.63
-60.32
-124.25
172.46
115.03
59.82
3.39
Note:
1. Three-port-wafer-probed data: Port 1 = RF Input, Port 2 = Selected RF Output (i.e., ON throw), and Port 3 = Unselected
RF Output (i.e., OFF throw).
7-28
RF
COMMON
RF1
RF2
SEL2
SEL1
Figure 1. HMMC-2007 Schematic.
Recommended Operating Conditions, TA = 25°C
Select Line
RF Path
SEL1
SEL2
RF IN to
RF OUT2
RF IN to
RF OUT1
+10V
-10 V
Isolated
Low Loss
-10 V
+10V
Low Loss
Isolated
7-29
HMMC-2007 Typical Performance
0
S21-ON, S31-ON
-20
-2.0
-3.0
S21-OFF, S31-OFF
-40
-60
-80
-4.0
-5.0
0
5
10
-100
0
Figure 2. Insertion Loss[1] vs.
Frequency.
-10
S33
-30
S22
-40
5
10
FREQUENCY (GHz)
Figure 5. Output Return Loss[1] vs.
Frequency.
1 GHz
-1
-2
10 MHz
-3
-4
-5
10
15
20
25
POWER INPUT (dBm)
Figure 6. Gain Compression vs.
Power Input.
Note:
1. Data taken with the device mounted in modular breadboard package.
7-30
-10
-20
S11
-30
-40
-50
0
5
FREQUENCY (GHz)
0
GAIN COMPRESSION (dB)
OUTPUT RETURN LOSS (dB)
10
Figure 3. Input-to-Output Isolation[1]
vs. Frequency.
0
-50
0
5
FREQUENCY (GHz)
FREQUENCY (GHz)
-20
0
INPUT RETURN LOSS (dB)
-1.0
ISOLATION (dB)
INSERTION LOSS (dB)
0
30
Figure 4. Input Return Loss[1] vs.
Frequency.
10
97
480
863
960
660
563
97
97
0
0
97
863
Figure 6. HMMC-2007 Bonding Pad Locations. (Dimensions in micrometers)
Note:
All compression data measured in an individual device mounted in an HP83040
Series Modular Microcircuit Package @ Tcase = 25°C.
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For
additional information contact your local HP sales representative.
7-31