DATA SHEET SEMICONDUCTOR ES1A~ES1J SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES SMA/DO-214AC • For surface mounted applications Unit:inch(mm) • Low profile package • Built-in strain relief .062(1.60) .047(1.20) • Easy pick and place • Superfast recovery times for high efficiency .114(2.90) .098(2.50) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction .181 (4.60) .157(4.00) • High temperature soldering: 260 OC / 10 seconds at terminals • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS .096(2.44) .078(2.00) environment substance directive request .012(.305) MECHANICAL DATA .006(.152) • Case: JEDEC DO-214AC molded plastic .008(.203 ) .002(.051) .060(1.52) .030(0.76) • Terminals: Solder plated, solderable per .208(5.28) .188(4.80) MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 12mm tape (EIA-481) • Weight: 0.002 ounce, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave 60Hz resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS Maximum Recurrent Peak Reverse V oltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rect if ied Current , Volts at TL=120 Peak For ward Surge Current 8.3ms single half si newave superi mposed on rated load(JEDEC method) Maximum Instantaneous Forward Vol tage at 1.0A IFSM VF Amps 30.0 Amps 0.95 Maxi mum DC Reverse Current T A=25 °C At Rated DC Blocking Voltage TA=100°C 1.0 1.25 5.0 IR 100 1.7 Volts uA TRR 35.0 Typi cal Junction capacitance (Note 2) Cj 10.0 pF Typical Thermal Resistance (Note 3 ) RθJA 35 °C /W Operating and Storage Temperature Range TSTG -55to +150 °C Maximum Reverse Recovery Time (Note 1) nS NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES ES1A THRU ES1J trr AVERAGE FORWARD CURRENT AMPERES +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 2.0 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 1cm 25 1000 TJ = 125 °C 10 TJ = 75 °C 1 TJ = 25 °C 0.1 40 60 80 100 100 125 150 175 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 10 INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT, MICROAMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 20 75 LEAD TEMPERATURE, °C 50 ns/cm 100 50 ES1A 1 ES1E ES1J 0.1 T J = 25 °C 0.01 0.001 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 14 30 JUNCTION CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES % OF PIV. VOLTS 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1 2 5 10 20 50 100 10 TJ = 25 °C f = 1.0MHz Vsig = 50mVp-p 8.0 6.0 4.0 2.0 .1 NUMBER OF CYCLES AT 60Hz 1 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT http://www.yeashin.com 12 Fig. 6-TYPICAL JUNCTION CAPACITANCE 2 REV.02 20110725