DATA SHEET ES2A Thru ES2J SEMICONDUCTOR SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere FEATURES •For surface mounted applications Unit:inch(mm) SMA/DO-214AC •Low profile package •Built-in strain relief .062(1.60) .047(1.20) •Easy pick and place •Superfast recovery times for high efficiency .114(2.90) .098(2.50) •Plastic package has Underwriters Laboratory Flammability Classification 94V-O •Glass passivated junction .181 (4.60) .157(4.00) •High temperature soldering: 260 OC / 10 seconds at terminals •High temperature soldering : 260OC / 10 seconds at terminals •Pb free product at available : 99% Sn above meet RoHS .096(2.44) .078(2.00) environment substance directive request .012(.305) .006(.152) .008(.203 ) .002(.051) MECHANICAL DATA .060(1.52) .030(0.76) •Case: JEDEC DO-214AA molded plastic .208(5.28) .188(4.80) •Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 •Polarity: Indicated by cathode band •Standard packaging: 12mm tape (EIA-481) •Weight: 0.003 ounce, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ¢J ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. UNITS SYMBOLS ES2A ES2B ES2C ES2D ES2E ES2G ES2J Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current, I(AV) 2.0 Amps IFSM 50.0 Amps at TL=110 OC Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method) VF Maximum Instantaneous Forward Voltage at 2.0A Maximum DC Reverse Current TA=25 OC 1.25 35.0 CJ 25.0 RθJA 20.0 TJ,TSTG -55 to +150 Typical Junction capacitance (Note 2) Typical Thermal Resistance (Note 3) Volts uA 100 TRR Maximum Reverse Recovery Time (Note 1) 1.7 5.0 IR O At Rated DC Blocking Voltage TA=100 C Operating and Storage Temperature Range 0.95 nS pF O C /W O C NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas http://www.yeashin.com 1 REV.02 20120705 DEVICE CHARACTERISTICS ES2A Thru ES2J AVERAGE FORWARD RECTIFIED CURRENT, AMPERES trr +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 1cm 2.4 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.3×0.3"(8.0×8.0mm) COPPER PAD AREAS 1.6 1.2 0.8 0.4 0 0 20 TJ = 75 OC T J = 25 OC 1 0.1 20 60 40 80 100 120 120 140 160 50.0 ES2A 10.0 ES2E 1.0 ES2J 0.1 TJ = 25 OC PULSE WIDTH = 300 ms 2% DUTY CYCLE 0.01 0 100 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 1,000 10 80 LEAD TEMPERATURE, C Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM T J = 100 OC 60 O 50 ns/cm 100 40 140 0.01 0.4 0.8 0.5 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 60 60 50 CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES Fig. 3-TYPICAL REVERSE CHARACTERISTICS 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 40 30 20 10 50 40 30 TJ = 25 OC 20 f = 1.0MHz Vsig = 50mVp-p 10 1 5 2 10 20 50 100 NUMBER OF CYCLES AT 60Hz .5 1 2 5 10 20 50 100 200 500 1000 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT http://www.yeashin.com .1 2 Fig. 6-TYPICAL JUNCTION CAPACITANCE REV.02 20120705