Diodes DIP Type Silicon Epitaxial Planar Diode 1N4148 Features Fast switching diode DO34 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage VR 75 V Peak reverse voltage VRM 100 V IF 200 mA Io 150 mA Surge Forward Current at t < 1 s and Tj = 25 IFSM 500 mA Power Dissipation at Tamb = 25 Ptot 500 mW Forward DC current at Tamb = 25 * Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 and f 50 Hz * * Junction Temperature Storage Temperature Range Tj 175 Tstg -65 to +175 * Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Leakage current IR Reverse Breakdown Voltage V(BR)R Testconditons Max Unit IF=10mA 1 V VR = 20 V 25 nA VR = 75 V 5 ìA VR = 20 V, Tj = 150 50 ìA IR = 100ìA 100 IR = 5.0ìA 75 Capacitance Ctot VF = VR = 0 Voltage rise when switching ON tested with 50 mA forward pulses Vfr tp = 0.1 ìs, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse recovery time trr IF = 10 mA IR = 1 mA, VR = 6 V, RL = 100 Ù Thermal resistance junction to ambient air * Rectification efficiency Min RthJA çv Typ V 4 pF 2.5 V 4 ns 0.35 K/mW f = 100 MHz, VRF = 2 V * Valid provided that electrodes are kept at ambient temperature. 0.45