1N4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diodes fast switching diode. This diode is also available in MiniMELF case with the type designation LL4148. DIM ENSIONS inches DIM Absolute Maximum Ratings (Ta=25 mm Min. Max. Min. Max. A - 0.154 - 3.9 B - 0.075 - 1.9 C - 0.020 - 0.52 D 1.083 - 27.50 - ) Symbols Values Units Reverse Voltage VR 75 Volts Peak reverse voltage VRM 100 Volts Rectified current (Average) Half wave rectification with Resist. Load at Tamb=25 and f 50Hz IO Surge forward current at t<1s and Tj=25 IFSM Power dissipation at Tamb=25 Ptot Junction Temperature Tj 200 Storage temperature range TS -65 to +200 Note: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1 150 1) 500 500 1) mA mA mW Note Characteristic s at T =25 j Symbols Min. Typ. Max. Units Forward voltage at IF=10mA VF - - 1 Volt Leakage current at VR=20V at VR=75V at VR=20V, Tj=150 IR IR IR - - 25 5 50 nA uA uA V(BR)R 100 - - Volts Capacitance at VF=VR=0 Ctot - - 4 F Voltage rise when switching ON tested with 50mA forward pulses tp=0.1uS, rise time<30nS, fp=5 to 100KHz Vfr - - 2.5 Volts Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 trr - - 4 nS RthA - - 0.35 0.45 - Reverse breakdown voltage tested wiht 100uA pulses Thermal resistance junction to ambient Air Rectification efficiency at f=100MHz, VRF=2V V Note: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Rectification efficiency measurement circuit 2 - 1) K/mW - RATINGS AND CHARACTERISTIC CURVES 3 RATINGS AND CHARACTERISTIC CURVES 4