Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● ● ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. ■ Absolute Maximum Ratings 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 (Ta=25˚C) +0.2 +0.2 0.45 –0.1 0.45 –0.1 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Collector cutoff current 1.27 2.3±0.2 Parameter Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA ICEO VCE = 20V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 Forward current transfer ratio hFE* VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) Transition frequency fT Noise voltage NV *h FE V 1000 2000 IC = 10mA, IB = 1mA 0.05 0.2 VCB = 10V, IE = –2mA, f = 200MHz 200 MHz 80 mV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT V Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 Transistor 2SD1010 PC — Ta IC — VCE 120 200 100 120 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 20 Collector current IC (mA) 300 60 80 100 120 140 160 2 4 6 8 10 12 0.3 Ta=75˚C 25˚C –25˚C 0.03 10 30 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 100 0.3 Cob — VCB 1 3 10 30 150 100 50 0 – 0.1 – 0.3 100 –1 IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 4 3 2 80 –3 1 3 10 30 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C Collector to base voltage VCB (V) 0 0.03 –100 NV — VCE VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –30 100 1 0 –10 Emitter current IE (mA) Noise voltage NV (mV) 100 2.0 200 NV — IC 8 5 1.6 VCB=10V Ta=25˚C Collector current IC (mA) 6 1.2 250 Collector current IC (mA) 7 0.8 VCE=10V Forward current transfer ratio hFE 1 3 0.4 Base to emitter voltage VBE (V) 1800 1200 3 1 0 fT — I E 1500 10 0.3 40 hFE — IC 30 0.01 0.1 60 Collector to emitter voltage VCE (V) IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 500 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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