ETC 2SA1531AS

Transistor
2SA1531, 2SA1531A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3929 and 2SC3929A
Unit: mm
■ Features
Collector to
2SA1531
Ratings
–35
VCBO
–35
0.3–0
0.65
1.3±0.1
0.65
V
–55
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–100
mA
Collector current
IC
–50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.1
V
–55
VCEO
emitter voltage 2SA1531A
Unit
+0.1
2SA1531A
2
0.15–0.05
2SA1531
base voltage
3
(Ta=25˚C)
Symbol
Collector to
1
0 to 0.1
Parameter
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
0.425
2.0±0.2
●
2.1±0.1
Low noise voltage NV.
High foward current transfer ratio hFE.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
F(2SA1531)
H(2SA1531A)
(Ta=25˚C)
Symbol
Parameter
Conditions
min
typ
max
Unit
ICBO
VCB = –10V, IE = 0
–100
nA
ICEO
VCE = –10V, IB = 0
–1
µA
VCBO
IC = –10µA, IE = 0
VCEO
IC = –2mA, IB = 0
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–5
Forward current transfer ratio
hFE*1
VCE = –5V, IC = –2mA
180
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA*2
Base to emitter voltage
VBE
VCE = –1V, IC = –100mA*2
Transition frequency
fT
VCB = –10V, IE = 2mA, f = 200MHz
Collector cutoff current
Collector to base
2SA1531
voltage
2SA1531A
Collector to emitter
2SA1531
voltage
2SA1531A
Noise voltage
*1h
FE1
V
–55
–35
V
–55
V
700
– 0.7
NV
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700
2SA1531
FR
FS
FT
2SA1531A
HR
HS
HT
V
150
*2
R
V
–1.0
MHz
Rg = 100kΩ, Function = FLAT
Rank
– 0.6
80
VCE = –10V, IC = –1mA, GV = 80dB
Rank classification
Marking
Symbol
–35
mV
Pulse measurement
1
2SA1531, 2SA1531A
Transistor
PC — Ta
IC — VCE
–160
IC — IB
–160
Ta=25˚C
VCE=–5V
Ta=25˚C
–140
200
IB=–350µA
–120
160
120
80
–120
–300µA
–250µA
–100
–200µA
–80
–150µA
–60
–100µA
–40
–20
–80
–60
–40
–20
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
0
Collector to emitter voltage VCE (V)
IB — VBE
– 0.1
IC — VBE
–800
25˚C
Collector current IC (mA)
–100
Base current IB (µA)
–400
–300
–200
– 0.4
–100
VCE=–5V
–700
–500
– 0.3
Ta=75˚C
– 0.5
VCE(sat) — IC
–120
VCE=–5V
Ta=25˚C
–600
– 0.2
Base current IB (mA)
–25˚C
–80
–60
Collector to emitter saturation voltage VCE(sat) (V)
0
IC/IB=10
–30
–10
–3
–1
– 0.3
–40
Ta=75˚C
25˚C
– 0.1
–20
–100
–25˚C
– 0.03
0
0
– 0.2
– 0.4
– 0.6
– 0.8
–1.0
0
Base to emitter voltage VBE (V)
– 0.4
– 0.8
–1.2
hFE — IC
Transition frequency fT (MHz)
Ta=75˚C
25˚C
–25˚C
200
100
400
350
300
250
200
150
100
50
–1
–3
–10
–30
Collector current IC (mA)
–100
0
0.1
0.3
1
3
–3
–10
–30
–100
20
VCB=–5V
Ta=25˚C
450
500
–1
Collector current IC (mA)
Cob — VCB
VCE=–5V
0
– 0.1 – 0.3
– 0.01
– 0.1 – 0.3
fT — IE
500
300
–2.0
Base to emitter voltage VBE (V)
600
400
–1.6
Collector output capacitance Cob (pF)
0
Forward current transfer ratio hFE
–100
–50µA
40
0
2
Collector current IC (mA)
–140
Collector current IC (mA)
Collector power dissipation PC (mW)
240
10
30
Emitter current IE (mA)
100
IE=0
f=1MHz
Ta=25˚C
18
16
14
12
10
8
6
4
2
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
2SA1531, 2SA1531A
Transistor
NV — VCE
NV — VCE
160
Rg=100kΩ
100
80
22kΩ
40
4.7kΩ
240
Rg=100kΩ
180
120
22kΩ
60
–10
–30
0
–1
–100
Collector to emitter voltage VCE (V)
–3
–30
180
Rg=100kΩ
22kΩ
– 0.03
– 0.3
–1
VCE=–10V
GV=80dB
Function=RIAA
120
100
80
60
IC=–1mA
40
240
180
120
60
IC=–1mA
– 0.1mA
20
–1
– 0.3
300
VCE=–10V
GV=80dB
Function=FLAT
– 0.5mA
– 0.1mA
0
Collector current IC (mA)
– 0.1
Collector current IC (mA)
NV — Rg
– 0.5mA
4.7kΩ
– 0.1
22kΩ
40
0
– 0.01
–100
Noise voltage NV (mV)
Noise voltage NV (mV)
Noise voltage NV (mV)
–10
140
240
– 0.03
60
20
160
VCE=–10V
GV=80dB
Function=RIAA
0
– 0.01
Rg=100kΩ
80
NV — Rg
300
60
100
Collector to emitter voltage VCE (V)
NV — IC
120
120
4.7kΩ
4.7kΩ
20
–3
VCE=–10V
GV=80dB
Function=FLAT
140
Noise voltage NV (mV)
Noise voltage NV (mV)
Noise voltage NV (mV)
120
60
160
IC=–1mA
GV=80dB
Function=FLAT
IC=–1mA
GV=80dB
Function=FLAT
140
0
–1
NV — IC
300
0
1
3
10
30
100
Signal source resistance Rg (kΩ)
1
3
10
30
100
Signal source resistance Rg (kΩ)
3
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2001 MAR